TY - GEN
T1 - Modeling and Analysis of Aging Impact on SRAM PUFs for Advanced FinFET Technology Nodes
AU - Masoumian, S.
AU - Maes, R.
AU - Beringuier-Boher, N.
AU - Yerriswamy, K.K.
AU - Schrijen , Geert-Jan
AU - Hamdioui, S.
AU - Taouil, M.
N1 - Green Open Access added to TU Delft Institutional Repository as part of the Taverne amendment. More information about this copyright law amendment can be found at https://www.openaccess.nl. Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
PY - 2025
Y1 - 2025
N2 - SRAM Physical Unclonable Functions (PUFs) serve as security primitives and can be used to generate random and unique identifiers, which makes their reliability crucial. The reliability is affected by aging and in particular Bias Temperature Instability (BTI), which in turn affects the PUF responses over time typically measured by the Hamming distance (HD). In this work, we model the BTI impact on SRAM PUF reliability for 14 nm FinFET technology and evaluate the reliability of SRAM PUFs using both simulation and silicon measurements. Additionally, we explore the effectiveness of an anti-aging technique on SRAM PUF reliability. Our simulation model and results (which include process variation and circuit noise) are validated with silicon measurements. From them we conclude the following: 1) there exists a direct correlation between BTI and the Hamming distance of an SRAM PUF, where its reliability decreases with 6% over a 6-month period due to aging, and 2) applying anti-aging patterns improves the Hamming distance and hence the reliability with 3% over a 6-month period.
AB - SRAM Physical Unclonable Functions (PUFs) serve as security primitives and can be used to generate random and unique identifiers, which makes their reliability crucial. The reliability is affected by aging and in particular Bias Temperature Instability (BTI), which in turn affects the PUF responses over time typically measured by the Hamming distance (HD). In this work, we model the BTI impact on SRAM PUF reliability for 14 nm FinFET technology and evaluate the reliability of SRAM PUFs using both simulation and silicon measurements. Additionally, we explore the effectiveness of an anti-aging technique on SRAM PUF reliability. Our simulation model and results (which include process variation and circuit noise) are validated with silicon measurements. From them we conclude the following: 1) there exists a direct correlation between BTI and the Hamming distance of an SRAM PUF, where its reliability decreases with 6% over a 6-month period due to aging, and 2) applying anti-aging patterns improves the Hamming distance and hence the reliability with 3% over a 6-month period.
KW - Anti-aging
KW - BTI
KW - FinFET
KW - SRAM PUF
UR - http://www.scopus.com/inward/record.url?scp=105011037528&partnerID=8YFLogxK
U2 - 10.1109/ETS63895.2025.11049648
DO - 10.1109/ETS63895.2025.11049648
M3 - Conference contribution
SN - 979-8-3315-9451-0
T3 - Proceedings of the European Test Workshop
BT - Proceedings of the 2025 IEEE European Test Symposium (ETS)
PB - IEEE
CY - Danvers
T2 - 2025 IEEE European Test Symposium, ETS 2025
Y2 - 26 May 2025 through 30 May 2025
ER -