Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 Transistor

Kookjin Lee*, Junhee Choi, Ben Kaczer, Alexander Grill, Jae Woo Lee, Simon Van Beek, Jaewoo Lee, Dong Hoon Shin, Sang Wook Lee, More Authors

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

10 Citations (Scopus)
46 Downloads (Pure)


In this study, high-performance few-layered ReS2 field-effect transistors (FETs), fabricated with hexagonal boron nitride (h-BN) as top/bottom dual gate dielectrics, are presented. The performance of h-BN dual gated ReS2 FET having a trade-off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics. The bottom h-BN dielectric has almost no defects and provides a physical distance between the traps in the SiO2 and the carriers in the ReS2 channel. Using a compact analyzing model and structural advantages, an excellent and optimized performance is introduced consisting of h-BN dual-gated ReS2 with a high mobility of 46.1 cm2 V−1 s−1, a high current on/off ratio of ≈106, a subthreshold swing of 2.7 V dec−1, and a low effective interface trap density (Nt,eff) of 7.85 × 1010 cm−2 eV−1 at a small operating voltage (<3 V). These phenomena are demonstrated through not only a fundamental current–voltage analysis, but also technology computer aided design simulations, time-dependent current, and low-frequency noise analysis. In addition, a simple method is introduced to extract the interlayer resistance of ReS2 channel through Y-function method as a function of constant top gate bias.

Original languageEnglish
Article number2100625
JournalAdvanced Functional Materials
Issue number23
Publication statusPublished - 2021


  • 2D materials
  • defects
  • dual-gate ReS
  • field-effect transistors
  • hexagonal boron nitride


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