Modeling of strained CMOS on disposable SiGe dots: Strain impacts on devices electrical characteristics

S Fregonese, Y Zhuang, JN Burghartz

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	2321-2326
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	9
Publication status	Published - 2007

Keywords

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title = "Modeling of strained CMOS on disposable SiGe dots: Strain impacts on devices electrical characteristics",

keywords = "academic journal papers, CWTS 0.75 <= JFIS < 2.00",

author = "S Fregonese and Y Zhuang and JN Burghartz",

year = "2007",

language = "Undefined/Unknown",

volume = "54",

pages = "2321--2326",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

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TY - JOUR

T1 - Modeling of strained CMOS on disposable SiGe dots: Strain impacts on devices electrical characteristics

AU - Fregonese, S

AU - Zhuang, Y

AU - Burghartz, JN

PY - 2007

Y1 - 2007

KW - academic journal papers

KW - CWTS 0.75 <= JFIS < 2.00

M3 - Article

SN - 0018-9383

VL - 54

SP - 2321

EP - 2326

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -