Modeling of Two-Dimensional Hyperbolic Heat Conduction in Silicon-On-Insulator Transistor by Equivalent RLC Network

Amir Mirza Gheytaghi; Guo Qi Zhang; Huaiyu Ye

doi:10.1109/EuroSimE.2018.8369870

Modeling of Two-Dimensional Hyperbolic Heat Conduction in Silicon-On-Insulator Transistor by Equivalent RLC Network

Amir Mirza Gheytaghi, Guo Qi Zhang, Huaiyu Ye

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Abstract

Thermal analysis plays a crucial role in designing and reliability of contemporary semiconductor devices. In this paper, the analogy between the electrical and thermal systems is extended for analysis of nonlinear two dimensional hyperbolic heat conduction (HHC) in Silicon-On-Insulator (SOI) transistor. The equivalent Resistance-Inductance-Capacitance(RLC) transmission line network is solved fast and easily by an electric solver tool such as HSPICE. The influence of a temperature dependent thermal conductivity and relaxation time in temperature distribution is discussed. The results demonstrate the wave character phenomena of the heat propagation that is occurring in nano-scaled high frequency electronic devices.

Original language	English
Title of host publication	2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	1-5
Number of pages	5
ISBN (Electronic)	978-1-5386-2359-6
DOIs	https://doi.org/10.1109/EuroSimE.2018.8369870
Publication status	Published - 2018
Event	EuroSimE 2018: 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems - Toulouse, France Duration: 15 Apr 2018 → 18 Apr 2018

Conference

Conference	EuroSimE 2018
Abbreviated title	EuroSimE 2018
Country/Territory	France
City	Toulouse
Period	15/04/18 → 18/04/18

Keywords

Heating systems
Mathematical model
Conductivity
Nanoscale devices
Heat transfer
Transistors

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10.1109/EuroSimE.2018.8369870

Cite this

Mirza Gheytaghi, A., Zhang, G. Q., & Ye, H. (2018). Modeling of Two-Dimensional Hyperbolic Heat Conduction in Silicon-On-Insulator Transistor by Equivalent RLC Network. In 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018 (pp. 1-5). IEEE. https://doi.org/10.1109/EuroSimE.2018.8369870

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title = "Modeling of Two-Dimensional Hyperbolic Heat Conduction in Silicon-On-Insulator Transistor by Equivalent RLC Network",

abstract = "Thermal analysis plays a crucial role in designing and reliability of contemporary semiconductor devices. In this paper, the analogy between the electrical and thermal systems is extended for analysis of nonlinear two dimensional hyperbolic heat conduction (HHC) in Silicon-On-Insulator (SOI) transistor. The equivalent Resistance-Inductance-Capacitance(RLC) transmission line network is solved fast and easily by an electric solver tool such as HSPICE. The influence of a temperature dependent thermal conductivity and relaxation time in temperature distribution is discussed. The results demonstrate the wave character phenomena of the heat propagation that is occurring in nano-scaled high frequency electronic devices.",

keywords = "Heating systems, Mathematical model, Conductivity, Nanoscale devices, Heat transfer, Transistors",

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doi = "10.1109/EuroSimE.2018.8369870",

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note = "EuroSimE 2018 : 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018 ; Conference date: 15-04-2018 Through 18-04-2018",

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Mirza Gheytaghi, A, Zhang, GQ & Ye, H 2018, Modeling of Two-Dimensional Hyperbolic Heat Conduction in Silicon-On-Insulator Transistor by Equivalent RLC Network. in 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018. IEEE, Piscataway, NJ, pp. 1-5, EuroSimE 2018, Toulouse, France, 15/04/18. https://doi.org/10.1109/EuroSimE.2018.8369870

Modeling of Two-Dimensional Hyperbolic Heat Conduction in Silicon-On-Insulator Transistor by Equivalent RLC Network. / Mirza Gheytaghi, Amir; Zhang, Guo Qi ; Ye, Huaiyu.
2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018. Piscataway, NJ: IEEE, 2018. p. 1-5.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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N2 - Thermal analysis plays a crucial role in designing and reliability of contemporary semiconductor devices. In this paper, the analogy between the electrical and thermal systems is extended for analysis of nonlinear two dimensional hyperbolic heat conduction (HHC) in Silicon-On-Insulator (SOI) transistor. The equivalent Resistance-Inductance-Capacitance(RLC) transmission line network is solved fast and easily by an electric solver tool such as HSPICE. The influence of a temperature dependent thermal conductivity and relaxation time in temperature distribution is discussed. The results demonstrate the wave character phenomena of the heat propagation that is occurring in nano-scaled high frequency electronic devices.

AB - Thermal analysis plays a crucial role in designing and reliability of contemporary semiconductor devices. In this paper, the analogy between the electrical and thermal systems is extended for analysis of nonlinear two dimensional hyperbolic heat conduction (HHC) in Silicon-On-Insulator (SOI) transistor. The equivalent Resistance-Inductance-Capacitance(RLC) transmission line network is solved fast and easily by an electric solver tool such as HSPICE. The influence of a temperature dependent thermal conductivity and relaxation time in temperature distribution is discussed. The results demonstrate the wave character phenomena of the heat propagation that is occurring in nano-scaled high frequency electronic devices.

KW - Heating systems

KW - Mathematical model

KW - Conductivity

KW - Nanoscale devices

KW - Heat transfer

KW - Transistors

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Mirza Gheytaghi A, Zhang GQ , Ye H. Modeling of Two-Dimensional Hyperbolic Heat Conduction in Silicon-On-Insulator Transistor by Equivalent RLC Network. In 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2018. Piscataway, NJ: IEEE. 2018. p. 1-5 doi: 10.1109/EuroSimE.2018.8369870

Modeling of Two-Dimensional Hyperbolic Heat Conduction in Silicon-On-Insulator Transistor by Equivalent RLC Network

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