Abstract
We present large-area "moly-poly" cells, with a front side MoOx/a-Si:H(i) passivating contact and a rear-side poly-Si/SiOx stack, and we have demonstrated that MoOx based c-Si solar cell technology can be scaled to industrial wafer size. Excellent surface passivation was achieved using MoOx and poly-Si, leading to implied Voc values above 700 mV, and a final cell Voc of 687 mV. However, some care needs to be taken to avoid parasitic optical losses in the infra-red (IR) spectral range due to free-carrier absorption (FCA). These losses were investigated by comparing poly-Si layers of different thicknesses, deposited by low-pressure or plasma-enhanced chemical vapor deposition (LPCVD or PECVD), at the rear side of moly-poly cells. We found that ultra-thin PECVD layers are most suitable for solar cell applications due to a very good trade-off between surface passivation and reduced FCA. Based on this result, a 18.1% efficient 9.2 × 9.2 cm2 moly-poly cell was made, which is the highest reported efficiency so far for moly-poly cells. Finally, we present a preliminary study of the parasitic IR losses in the MoOx layer itself, when deposited on either a-Si:H or SiOx passivation layers.
Original language | English |
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Title of host publication | SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics |
Editors | Rolf Brendel, Jef Poortmans, Arthur Weeber, Giso Hahn, Christophe Ballif, Stefan Glunz, Pierre-Jean Ribeyron |
Publisher | American Institute of Physics |
Number of pages | 8 |
Volume | 1999 |
ISBN (Print) | 978-073541715-1 |
DOIs | |
Publication status | Published - 2018 |
Event | SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics - Lausanne, Switzerland Duration: 19 Mar 2018 → 21 Mar 2018 |
Conference
Conference | SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics |
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Country/Territory | Switzerland |
City | Lausanne |
Period | 19/03/18 → 21/03/18 |