Monolithic 3-D integration of SRAM and image sensor using two layers of single-grain silicon

J Derakhshandeh, N Golshani, R Ishihara, MR Tajari Mofrad, M Robertson, T Morrison, CIM Beenakker

Research output: Contribution to journal › Article › Scientific › peer-review

20 Citations (Scopus)

Original language	English
Pages (from-to)	3954-3961
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	11
DOIs	https://doi.org/10.1109/TED.2011.2163720
Publication status	Published - 2011

Keywords

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title = "Monolithic 3-D integration of SRAM and image sensor using two layers of single-grain silicon",

keywords = "CWTS 0.75 <= JFIS < 2.00",

author = "J Derakhshandeh and N Golshani and R Ishihara and {Tajari Mofrad}, MR and M Robertson and T Morrison and CIM Beenakker",

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T1 - Monolithic 3-D integration of SRAM and image sensor using two layers of single-grain silicon

AU - Derakhshandeh, J

AU - Golshani, N

AU - Ishihara, R

AU - Tajari Mofrad, MR

AU - Robertson, M

AU - Morrison, T

AU - Beenakker, CIM

PY - 2011

Y1 - 2011

KW - CWTS 0.75 <= JFIS < 2.00

U2 - 10.1109/TED.2011.2163720

DO - 10.1109/TED.2011.2163720

M3 - Article

SN - 0018-9383

VL - 58

SP - 3954

EP - 3961

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -