Monte Carlo simulation of the secondary electron yield of silicon rich silicon nitride

A. M.M.G. Theulings, S. X. Tao, C. W. Hagen, H. Van Der Graaf*

*Corresponding author for this work

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The effect of doping in Si3N4 membranes on the secondary electron yield is investigated using Monte Carlo simulations of the electron-matter interactions. The effect of the concentration and the distribution of the doping in silicon rich silicon nitride membranes is studied by using the energy loss function as obtained from ab initio density functional theory calculations in the electron scattering models of the Monte Carlo simulations. An increasing doping concentration leads to a decreasing maximum secondary electron yield. The distribution of the doped silicon atoms can be optimised in order to minimize the decrease in yield.

Original languageEnglish
Article numberP03008
Number of pages9
JournalJournal of Instrumentation
Issue number3
Publication statusPublished - 2022

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  • Charge transport and multiplication in solid media
  • Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc)
  • Electron multipliers (vacuum)
  • Vacuum-based detectors


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