MOSFET-Based and P-N Diode Based Temperature Sensor in a 4H-SiC CMOS Technology

Jiarui  Mo; Jinglin Li; Yaqian Zhang; Alexander  May; Tobias  Erlbacher; Guoqi  Zhang; Sten Vollebregt

MOSFET-Based and P-N Diode Based Temperature Sensor in a 4H-SiC CMOS Technology

Jiarui Mo
, Jinglin Li
, Yaqian Zhang
, Alexander May
, Tobias Erlbacher
, Guoqi Zhang
, Sten Vollebregt

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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Abstract

This paper presents p-n diode temperature sensors and MOSFET temperature sensors in low-voltage silicon carbide (SiC) CMOS technology. The reported temperature sensors directly make use of the existing doping layers in the CMOS process, thus enabling the monolithic integration of the SiC temperature transducer and the SiC readout electronics. The temperature sensor is characterized from 25 to 200°C. The diode-based temperature sensor has a maximum sensitivity of 3.27 mV/°C and a maximum R 2 of 99.81%. The MOSFET-based temperature sensor achieved a maximal sensitivity of 16.5 mV/°C, however, with less linearity (R 2 max = 99.11%). This technology shows a unique potential for implementing harsh environment smart temperature sensors.

Original language	English
Title of host publication	Proceedings of the 2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)
Place of Publication	Piscaway
Publisher	IEEE
Pages	201-204
Number of pages	4
ISBN (Electronic)	978-4-88686-435-2
ISBN (Print)	979-8-3503-3302-2
Publication status	Published - 2023
Event	Transducers 2023: 22nd International Conference on Solid-State Sensors, Actuators and Microsystems - Kyoto, Japan Duration: 25 Jun 2023 → 29 Jun 2023

Conference

Conference	Transducers 2023: 22nd International Conference on Solid-State Sensors, Actuators and Microsystems
Country/Territory	Japan
City	Kyoto
Period	25/06/23 → 29/06/23

Bibliographical note

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

Silicon carbide
temperature sensing
CMOS
harsh environment

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MOSFET-Based_and_P-N_Diode_Based_Temperature_Sensor_in_a_4H-SiC_CMOS_TechnologyFinal published version, 1.69 MB

Cite this

@inproceedings{6966a07a17c4454f805b1115eb8288fd,

title = "MOSFET-Based and P-N Diode Based Temperature Sensor in a 4H-SiC CMOS Technology",

abstract = "This paper presents p-n diode temperature sensors and MOSFET temperature sensors in low-voltage silicon carbide (SiC) CMOS technology. The reported temperature sensors directly make use of the existing doping layers in the CMOS process, thus enabling the monolithic integration of the SiC temperature transducer and the SiC readout electronics. The temperature sensor is characterized from 25 to 200°C. The diode-based temperature sensor has a maximum sensitivity of 3.27 mV/°C and a maximum R 2 of 99.81\%. The MOSFET-based temperature sensor achieved a maximal sensitivity of 16.5 mV/°C, however, with less linearity (R 2 max = 99.11\%). This technology shows a unique potential for implementing harsh environment smart temperature sensors.",

keywords = "Silicon carbide, temperature sensing, CMOS, harsh environment",

author = "Jiarui Mo and Jinglin Li and Yaqian Zhang and Alexander May and Tobias Erlbacher and Guoqi Zhang and Sten Vollebregt",

note = "Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.; Transducers 2023: 22nd International Conference on Solid-State Sensors, Actuators and Microsystems ; Conference date: 25-06-2023 Through 29-06-2023",

year = "2023",

language = "English",

isbn = "979-8-3503-3302-2",

pages = "201--204",

booktitle = "Proceedings of the 2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)",

publisher = "IEEE",

address = "United States",

}

Mo, J , Li, J , Zhang, Y, May, A, Erlbacher , T, Zhang, G & Vollebregt, S 2023, MOSFET-Based and P-N Diode Based Temperature Sensor in a 4H-SiC CMOS Technology. in Proceedings of the 2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers). IEEE, Piscaway, pp. 201-204, Transducers 2023: 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Kyoto, Japan, 25/06/23.

MOSFET-Based and P-N Diode Based Temperature Sensor in a 4H-SiC CMOS Technology. / Mo, Jiarui ; Li, Jinglin ; Zhang, Yaqian et al.
Proceedings of the 2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers). Piscaway: IEEE, 2023. p. 201-204.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - MOSFET-Based and P-N Diode Based Temperature Sensor in a 4H-SiC CMOS Technology

AU - Mo, Jiarui

AU - Li, Jinglin

AU - Zhang, Yaqian

AU - May, Alexander

AU - Erlbacher , Tobias

AU - Zhang, Guoqi

AU - Vollebregt, Sten

N1 - Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

PY - 2023

Y1 - 2023

N2 - This paper presents p-n diode temperature sensors and MOSFET temperature sensors in low-voltage silicon carbide (SiC) CMOS technology. The reported temperature sensors directly make use of the existing doping layers in the CMOS process, thus enabling the monolithic integration of the SiC temperature transducer and the SiC readout electronics. The temperature sensor is characterized from 25 to 200°C. The diode-based temperature sensor has a maximum sensitivity of 3.27 mV/°C and a maximum R 2 of 99.81%. The MOSFET-based temperature sensor achieved a maximal sensitivity of 16.5 mV/°C, however, with less linearity (R 2 max = 99.11%). This technology shows a unique potential for implementing harsh environment smart temperature sensors.

AB - This paper presents p-n diode temperature sensors and MOSFET temperature sensors in low-voltage silicon carbide (SiC) CMOS technology. The reported temperature sensors directly make use of the existing doping layers in the CMOS process, thus enabling the monolithic integration of the SiC temperature transducer and the SiC readout electronics. The temperature sensor is characterized from 25 to 200°C. The diode-based temperature sensor has a maximum sensitivity of 3.27 mV/°C and a maximum R 2 of 99.81%. The MOSFET-based temperature sensor achieved a maximal sensitivity of 16.5 mV/°C, however, with less linearity (R 2 max = 99.11%). This technology shows a unique potential for implementing harsh environment smart temperature sensors.

KW - Silicon carbide

KW - temperature sensing

KW - CMOS

KW - harsh environment

UR - https://ieeexplore.ieee.org/document/10516992/

M3 - Conference contribution

SN - 979-8-3503-3302-2

SP - 201

EP - 204

BT - Proceedings of the 2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)

PB - IEEE

CY - Piscaway

T2 - Transducers 2023: 22nd International Conference on Solid-State Sensors, Actuators and Microsystems

Y2 - 25 June 2023 through 29 June 2023

ER -

MOSFET-Based and P-N Diode Based Temperature Sensor in a 4H-SiC CMOS Technology

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