Multi-level control of resistive ram (Rram) using a write termination to achieve 4 bits/cell in high resistance state

Hassan Aziza*, Said Hamdioui, Moritz Fieback, Mottaqiallah Taouil, Mathieu Moreau, Patrick Girard, Arnaud Virazel, Karine Coulié

*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

5 Citations (Scopus)
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