Abstract
Memristor technology has shown great promise for energy-efficient computing [1] , though it is still facing many challenges [1 , 2]. For instance, the required additional costly electroforming to establish conductive pathways is seen as a significant drawback as it contributes to power and area overheads, and limited device endurance. In this work, we propose a novel forming-free HfO2 -based ReRAM device with low operating voltages , multi-level capability , and less sensitivity to device-to-device (D2D) and cycle-to-cycle (C2C) variations. The device is fabricated using CMOS-compatible processes, excluding the undesirable complex steps mandatory to manufacture the state-of-the-art forming-free devices [3, 4, 5]. This is accomplished by utilizing the desirable formation energy of Pd-O bonds [6, 7], which creates conducting paths at room temperature while maintaining the analog switching ability of the devices. The proposed ReRAM device holds a great value for dense memories and energy-efficient compute architectures.
Original language | English |
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Title of host publication | DRC 2024 - 82nd Device Research Conference |
Publisher | IEEE |
ISBN (Electronic) | 9798350373738 |
DOIs | |
Publication status | Published - 2024 |
Event | 82nd Device Research Conference, DRC 2024 - College Park, United States Duration: 24 Jun 2024 → 26 Jun 2024 |
Publication series
Name | Device Research Conference - Conference Digest, DRC |
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ISSN (Print) | 1548-3770 |
Conference
Conference | 82nd Device Research Conference, DRC 2024 |
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Country/Territory | United States |
City | College Park |
Period | 24/06/24 → 26/06/24 |
Bibliographical note
Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-careOtherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.