Multi-terminal electronic transport in boron nitride encapsulated TiS3 nanosheets

Nikos Papadopoulos, Eduardo Flores, Kenji Watanabe, Takashi Taniguchi, Jose R. Ares, Carlos Sanchez, Isabel J. Ferrer, Andres Castellanos-Gomez, Gary A. Steele, Herre S.J. Van Der Zant

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Abstract

We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS3) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below ∼60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can be controlled through the back-gate.

Original languageEnglish
Article number015009
Number of pages7
Journal2D Materials
Volume7
Issue number1
DOIs
Publication statusPublished - 2019

Keywords

  • charge density wave
  • electronic transport
  • semiconductors
  • titanium trisulfide

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    Papadopoulos, N., Flores, E., Watanabe, K., Taniguchi, T., Ares, J. R., Sanchez, C., Ferrer, I. J., Castellanos-Gomez, A., Steele, G. A., & Van Der Zant, H. S. J. (2019). Multi-terminal electronic transport in boron nitride encapsulated TiS3 nanosheets. 2D Materials, 7(1), [015009]. https://doi.org/10.1088/2053-1583/ab4ef3