n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

V Jovanovic, C Biasotto, LK Nanver, J Moers, D Gruetzmacher, J Gerharz, G Mussler, J van der Cingel, J Zhang, G Bauer, OG Schmidt, L Miglio

Research output: Contribution to journalArticleScientificpeer-review

40 Citations (Scopus)
Original languageEnglish
Pages (from-to)1083-1085
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
Publication statusPublished - 2010


  • CWTS JFIS >= 2.00

Cite this