Near-ideal implanted shallow-junction diode formation by excimer laser annealing

V Gonda; A Bourtsev; TLM Scholtes; LK Nanver

Near-ideal implanted shallow-junction diode formation by excimer laser annealing

V Gonda, A Bourtsev, TLM Scholtes, LK Nanver

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

13 Citations (Scopus)

Original language	Undefined/Unknown
Title of host publication	Proceedings of the 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors
Editors	s.n.
Place of Publication	Piscataway
Publisher	IEEE Society
Pages	93-100
Number of pages	8
Publication status	Published - 2005
Event	13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005, Santa Barbara (CA), USA - Piscataway Duration: 4 Oct 2005 → 7 Oct 2005

Publication series

Name
Publisher	IEEE

Name
Volume	13

Conference

Conference	13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005, Santa Barbara (CA), USA
Period	4/10/05 → 7/10/05

Bibliographical note

Editor & ISBN onbekend, WPM

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Cite this

@inproceedings{7f22ca72aa834c8b8f11b78cad108a95,

title = "Near-ideal implanted shallow-junction diode formation by excimer laser annealing",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "V Gonda and A Bourtsev and TLM Scholtes and LK Nanver",

note = "Editor & ISBN onbekend, WPM; 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005, Santa Barbara (CA), USA ; Conference date: 04-10-2005 Through 07-10-2005",

year = "2005",

language = "Undefined/Unknown",

publisher = "IEEE Society",

pages = "93--100",

editor = "s.n.",

booktitle = "Proceedings of the 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors",

}

Gonda, V, Bourtsev, A, Scholtes, TLM & Nanver, LK 2005, Near-ideal implanted shallow-junction diode formation by excimer laser annealing. in s.n. (ed.), Proceedings of the 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors. IEEE Society, Piscataway, pp. 93-100, 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005, Santa Barbara (CA), USA, 4/10/05.

Near-ideal implanted shallow-junction diode formation by excimer laser annealing. / Gonda, V; Bourtsev, A; Scholtes, TLM et al.
Proceedings of the 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors. ed. / s.n. Piscataway: IEEE Society, 2005. p. 93-100.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Near-ideal implanted shallow-junction diode formation by excimer laser annealing

AU - Gonda, V

AU - Bourtsev, A

AU - Scholtes, TLM

AU - Nanver, LK

N1 - Editor & ISBN onbekend, WPM

PY - 2005

Y1 - 2005

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SP - 93

EP - 100

BT - Proceedings of the 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors

A2 - s.n., null

PB - IEEE Society

CY - Piscataway

T2 - 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2005, Santa Barbara (CA), USA

Y2 - 4 October 2005 through 7 October 2005

ER -