TY - JOUR
T1 - Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2 Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes
AU - Holovchenko, Anastasia
AU - Dugay, Julien
AU - Giménez-Marqués, Mónica
AU - Torres-Cavanillas, Ramón
AU - Coronado, Eugenio
AU - van der Zant, Herre S J
PY - 2016/9/7
Y1 - 2016/9/7
N2 - The charge transport properties of SCO [Fe(Htrz)2(trz)](BF4) NPs covered with a silica shell placed in between single-layer graphene electrodes are reported. A reproducible thermal hysteresis loop in the conductance above room-temperature is evidenced. This bistability combined with the versatility of graphene represents a promising scenario for a variety of technological applications but also for future sophisticated fundamental studies.
AB - The charge transport properties of SCO [Fe(Htrz)2(trz)](BF4) NPs covered with a silica shell placed in between single-layer graphene electrodes are reported. A reproducible thermal hysteresis loop in the conductance above room-temperature is evidenced. This bistability combined with the versatility of graphene represents a promising scenario for a variety of technological applications but also for future sophisticated fundamental studies.
KW - bistability
KW - graphene
KW - molecular electronics
KW - molecular spintronics
KW - nanoparticles
KW - spin-crossover
UR - http://www.scopus.com/inward/record.url?scp=84984889784&partnerID=8YFLogxK
U2 - 10.1002/adma.201600890
DO - 10.1002/adma.201600890
M3 - Article
C2 - 27184546
SN - 0935-9648
VL - 28
SP - 7228
EP - 7233
JO - Advanced Materials
JF - Advanced Materials
IS - 33
ER -