Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2 Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes

Anastasia Holovchenko, Julien Dugay, Mónica Giménez-Marqués, Ramón Torres-Cavanillas, Eugenio Coronado, Herre S J van der Zant

Research output: Contribution to journalArticleScientificpeer-review

52 Citations (Scopus)

Abstract

The charge transport properties of SCO [Fe(Htrz)2(trz)](BF4) NPs covered with a silica shell placed in between single-layer graphene electrodes are reported. A reproducible thermal hysteresis loop in the conductance above room-temperature is evidenced. This bistability combined with the versatility of graphene represents a promising scenario for a variety of technological applications but also for future sophisticated fundamental studies.
Original languageEnglish
Pages (from-to)7228-7233
Number of pages6
JournalAdvanced Materials
Volume28
Issue number33
DOIs
Publication statusPublished - 7 Sep 2016

Keywords

  • bistability
  • graphene
  • molecular electronics
  • molecular spintronics
  • nanoparticles
  • spin-crossover

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