New insights in the nanostructure and defect states of hydrogenated amorphous silicon obtained by annealing

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	65-71
Number of pages	7
Journal	IEEE Journal of Photovoltaics
Volume	3
Issue number	1
DOIs	https://doi.org/10.1109/JPHOTOV.2012.2226870
Publication status	Published - 2013

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@article{467aabe05e634238b9a9b2b520804cf6,

title = "New insights in the nanostructure and defect states of hydrogenated amorphous silicon obtained by annealing",

author = "J Melskens and AHM Smets and M Schouten and SWH Eijt and H Schut and M Zeman",

year = "2013",

doi = "10.1109/JPHOTOV.2012.2226870",

language = "English",

volume = "3",

pages = "65--71",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

publisher = "IEEE",

number = "1",

}

TY - JOUR

T1 - New insights in the nanostructure and defect states of hydrogenated amorphous silicon obtained by annealing

AU - Melskens, J

AU - Smets, AHM

AU - Schouten, M

AU - Eijt, SWH

AU - Schut, H

AU - Zeman, M

PY - 2013

Y1 - 2013

U2 - 10.1109/JPHOTOV.2012.2226870

DO - 10.1109/JPHOTOV.2012.2226870

M3 - Article

SN - 2156-3381

VL - 3

SP - 65

EP - 71

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 1

ER -