New opportunities with nanowires

E. P.A.M. Bakkers; H. I.T. Hauge; A. Li; S. Assali; A. Dijkstra; R. Tucker; Y. Ren; S. Conesa-Boj; M. A. Verheijen

doi:10.1109/PHOSST.2016.7548757

New opportunities with nanowires

E. P.A.M. Bakkers, H. I.T. Hauge, A. Li, S. Assali, A. Dijkstra, R. Tucker, Y. Ren, S. Conesa-Boj, M. A. Verheijen

QRD/Kouwenhoven Lab

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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Abstract

Light emission from Si, would allow integration of electronic and optical functionality in the main electronics platform technology, but this has been impossible due to the indirect band gap of Si. In this talk I will discuss 2 different approaches, using unique properties of nanowires, to realize light emission from Si-based compounds.

Original language	English
Title of host publication	2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	124-125
Number of pages	2
ISBN (Electronic)	9781509019007
DOIs	https://doi.org/10.1109/PHOSST.2016.7548757
Publication status	Published - 22 Aug 2016
Event	2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016 - Newport Beach, United States Duration: 11 Jul 2016 → 13 Jul 2016

Conference

Conference	2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016
Country/Territory	United States
City	Newport Beach
Period	11/07/16 → 13/07/16

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10.1109/PHOSST.2016.7548757

07548757Final published version, 778 KB

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title = "New opportunities with nanowires",

abstract = "Light emission from Si, would allow integration of electronic and optical functionality in the main electronics platform technology, but this has been impossible due to the indirect band gap of Si. In this talk I will discuss 2 different approaches, using unique properties of nanowires, to realize light emission from Si-based compounds.",

author = "Bakkers, {E. P.A.M.} and Hauge, {H. I.T.} and A. Li and S. Assali and A. Dijkstra and R. Tucker and Y. Ren and S. Conesa-Boj and Verheijen, {M. A.}",

year = "2016",

month = aug,

day = "22",

doi = "10.1109/PHOSST.2016.7548757",

language = "English",

pages = "124--125",

booktitle = "2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016 ; Conference date: 11-07-2016 Through 13-07-2016",

}

Bakkers, EPAM, Hauge, HIT, Li, A, Assali, S, Dijkstra, A, Tucker, R, Ren, Y, Conesa-Boj, S & Verheijen, MA 2016, New opportunities with nanowires. in 2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016., 7548757, Institute of Electrical and Electronics Engineers (IEEE), pp. 124-125, 2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016, Newport Beach, United States, 11/07/16. https://doi.org/10.1109/PHOSST.2016.7548757

New opportunities with nanowires. / Bakkers, E. P.A.M.; Hauge, H. I.T.; Li, A.; Assali, S.; Dijkstra, A.; Tucker, R.; Ren, Y.; Conesa-Boj, S.; Verheijen, M. A.

2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016. Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 124-125 7548757.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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AU - Hauge, H. I.T.

AU - Li, A.

AU - Assali, S.

AU - Dijkstra, A.

AU - Tucker, R.

AU - Ren, Y.

AU - Conesa-Boj, S.

AU - Verheijen, M. A.

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N2 - Light emission from Si, would allow integration of electronic and optical functionality in the main electronics platform technology, but this has been impossible due to the indirect band gap of Si. In this talk I will discuss 2 different approaches, using unique properties of nanowires, to realize light emission from Si-based compounds.

AB - Light emission from Si, would allow integration of electronic and optical functionality in the main electronics platform technology, but this has been impossible due to the indirect band gap of Si. In this talk I will discuss 2 different approaches, using unique properties of nanowires, to realize light emission from Si-based compounds.

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BT - 2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016

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New opportunities with nanowires

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