Next generation CMOS sensors

Kofi Makinwa

doi:10.1109/IWASI.2017.7974250

Abstract

Summary form only given. Today, CMOS Temperature sensors are predominantly based on parasitic bipolar junction transistors (BJTs). This is because such sensors can achieve high accuracy (<; 0.1C error) after a single room-temperature calibration. Although resistor-based temperature sensors can achieve higher resolution and energy-efficiency, they usually require multi-point calibration to reach similar levels of accuracy. In a recent breakthrough, we have discovered that temperature sensors based on silicided poly resistors are an exception to this rule. Two temperature sensor architectures will be presented that use such resistors to achieve good accuracy (<;0.2C) after a one or two-point calibration, as well as state-of-the-art energy-efficiency and resolution.

Original language	English
Pages	201-201
Number of pages	1
DOIs	https://doi.org/10.1109/IWASI.2017.7974250
Publication status	Published - 2017
Event	IWASI 2017: 7th IEEE International Workshop on Advances in Sensors and Interfaces - Vieste, Italy Duration: 15 Jun 2017 → 16 Jun 2017 Conference number: 7 http://iwasi2017.poliba.it/

Workshop

Workshop	IWASI 2017
Country/Territory	Italy
City	Vieste
Period	15/06/17 → 16/06/17
Internet address	http://iwasi2017.poliba.it/

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1109/IWASI.2017.7974250

Cite this

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title = "Next generation CMOS sensors",

abstract = "Summary form only given. Today, CMOS Temperature sensors are predominantly based on parasitic bipolar junction transistors (BJTs). This is because such sensors can achieve high accuracy (<; 0.1C error) after a single room-temperature calibration. Although resistor-based temperature sensors can achieve higher resolution and energy-efficiency, they usually require multi-point calibration to reach similar levels of accuracy. In a recent breakthrough, we have discovered that temperature sensors based on silicided poly resistors are an exception to this rule. Two temperature sensor architectures will be presented that use such resistors to achieve good accuracy (<;0.2C) after a one or two-point calibration, as well as state-of-the-art energy-efficiency and resolution.",

author = "Kofi Makinwa",

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N2 - Summary form only given. Today, CMOS Temperature sensors are predominantly based on parasitic bipolar junction transistors (BJTs). This is because such sensors can achieve high accuracy (<; 0.1C error) after a single room-temperature calibration. Although resistor-based temperature sensors can achieve higher resolution and energy-efficiency, they usually require multi-point calibration to reach similar levels of accuracy. In a recent breakthrough, we have discovered that temperature sensors based on silicided poly resistors are an exception to this rule. Two temperature sensor architectures will be presented that use such resistors to achieve good accuracy (<;0.2C) after a one or two-point calibration, as well as state-of-the-art energy-efficiency and resolution.

AB - Summary form only given. Today, CMOS Temperature sensors are predominantly based on parasitic bipolar junction transistors (BJTs). This is because such sensors can achieve high accuracy (<; 0.1C error) after a single room-temperature calibration. Although resistor-based temperature sensors can achieve higher resolution and energy-efficiency, they usually require multi-point calibration to reach similar levels of accuracy. In a recent breakthrough, we have discovered that temperature sensors based on silicided poly resistors are an exception to this rule. Two temperature sensor architectures will be presented that use such resistors to achieve good accuracy (<;0.2C) after a one or two-point calibration, as well as state-of-the-art energy-efficiency and resolution.

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