Non-conducting interfaces of LaAlO3/SrTiO3 produced in sputter deposition: The role of stoichiometry

IM Dildar; DB Boltje; MHS Hesselerth; J Aarts; Q Xu; HW Zandbergen

doi:10.1063/1.4798828

Non-conducting interfaces of LaAlO3/SrTiO3 produced in sputter deposition: The role of stoichiometry

IM Dildar, DB Boltje, MHS Hesselerth, J Aarts, Q Xu, HW Zandbergen

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Abstract

We have investigated the properties of interfaces between LaAlO3 films grown on SrTiO3 substrates singly terminated by TiO2. We used RF sputtering in a high-pressure oxygen atmosphere. The films are smooth, with flat surfaces. Transmission electron microscopy shows sharp and continuous interfaces with some slight intermixing. The elemental ratio of La to Al, measured by the energy dispersive X-ray technique, is found to be 1.07. Importantly, we find these interfaces to be non-conducting, indicating that the sputtered interface is not electronically reconstructed in the way reported for films grown by pulsed laser deposition because of the different interplays among stoichiometry, mixing, and oxygen vacancies.

Original language	English
Pages (from-to)	1-4
Number of pages	4
Journal	Applied Physics Letters
Volume	102
Issue number	121601
DOIs	https://doi.org/10.1063/1.4798828
Publication status	Published - 2013

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@article{98a68c257361427191fc769a8a39b99d,

title = "Non-conducting interfaces of LaAlO3/SrTiO3 produced in sputter deposition: The role of stoichiometry",

abstract = "We have investigated the properties of interfaces between LaAlO3 films grown on SrTiO3 substrates singly terminated by TiO2. We used RF sputtering in a high-pressure oxygen atmosphere. The films are smooth, with flat surfaces. Transmission electron microscopy shows sharp and continuous interfaces with some slight intermixing. The elemental ratio of La to Al, measured by the energy dispersive X-ray technique, is found to be 1.07. Importantly, we find these interfaces to be non-conducting, indicating that the sputtered interface is not electronically reconstructed in the way reported for films grown by pulsed laser deposition because of the different interplays among stoichiometry, mixing, and oxygen vacancies.",

author = "IM Dildar and DB Boltje and MHS Hesselerth and J Aarts and Q Xu and HW Zandbergen",

year = "2013",

doi = "10.1063/1.4798828",

language = "English",

volume = "102",

pages = "1--4",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "121601",

}

TY - JOUR

T1 - Non-conducting interfaces of LaAlO3/SrTiO3 produced in sputter deposition: The role of stoichiometry

AU - Dildar, IM

AU - Boltje, DB

AU - Hesselerth, MHS

AU - Aarts, J

AU - Xu, Q

AU - Zandbergen, HW

PY - 2013

Y1 - 2013

N2 - We have investigated the properties of interfaces between LaAlO3 films grown on SrTiO3 substrates singly terminated by TiO2. We used RF sputtering in a high-pressure oxygen atmosphere. The films are smooth, with flat surfaces. Transmission electron microscopy shows sharp and continuous interfaces with some slight intermixing. The elemental ratio of La to Al, measured by the energy dispersive X-ray technique, is found to be 1.07. Importantly, we find these interfaces to be non-conducting, indicating that the sputtered interface is not electronically reconstructed in the way reported for films grown by pulsed laser deposition because of the different interplays among stoichiometry, mixing, and oxygen vacancies.

AB - We have investigated the properties of interfaces between LaAlO3 films grown on SrTiO3 substrates singly terminated by TiO2. We used RF sputtering in a high-pressure oxygen atmosphere. The films are smooth, with flat surfaces. Transmission electron microscopy shows sharp and continuous interfaces with some slight intermixing. The elemental ratio of La to Al, measured by the energy dispersive X-ray technique, is found to be 1.07. Importantly, we find these interfaces to be non-conducting, indicating that the sputtered interface is not electronically reconstructed in the way reported for films grown by pulsed laser deposition because of the different interplays among stoichiometry, mixing, and oxygen vacancies.

U2 - 10.1063/1.4798828

DO - 10.1063/1.4798828

M3 - Article

SN - 0003-6951

VL - 102

SP - 1

EP - 4

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 121601

ER -

Non-conducting interfaces of LaAlO3/SrTiO3 produced in sputter deposition: The role of stoichiometry

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