Novel Monocrystalline Silicon Texturing for supporting nano- to polycrystalline layers

Thierry De Vrijer, Arno H.M. Smets

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Abstract

Crystalline silicon tandems with perovskites, CIGS and nanocrystalline silicon, as well as the TOPcon design are incompatible with the conventional pyramidal surface texture of silicon. Three texturing approaches, using alkaline and/or acidic wet chemical etches, are investigated in this work, that can lead to the crack-free growth of a nano- to poly-crystalline silicon material on textured surfaces. Without acidic smoothening, the fraction of <111> pyramidal surface coverage has to remain relatively small to prevent crack formation during crystalline growth. Applying an acidic etch as a function of time continuously smoothens surface features. This shifts the reflection to wider scattering angles and results in higher total reflected intensity with respect to the conventional texture, making it an interesting option for a wide variety of tandem pv applications. Finally we demonstrate crater like features on a <100> monocrystalline silicon surface using an etching process inlcuding a sacrificial layer. These craters increases light scattering into wider angles, but to a lesser extent than the former approach.

Original languageEnglish
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
PublisherIEEE
Pages976-978
Number of pages3
ISBN (Electronic)978-1-7281-6115-0
ISBN (Print)978-1-7281-6116-7
DOIs
Publication statusPublished - 2021
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: 15 Jun 202021 Aug 2020

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/TerritoryCanada
CityCalgary
Period15/06/2021/08/20

Keywords

  • crystalline silicon
  • nanocrystalline growth
  • novel texture
  • polycrystalline growth
  • surface features
  • wet chemical etch

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