Abstract
The electronic and mechanical properties of monolayer SnP2 are calculated by density functional theory (DFT), showing that monolayer SnP2 is a quasi-direct semiconductor with a moderate bandgap of 1.44 eV. The phonon dispersion, the molecular dynamics and the strain energy reveal that SnP2 is dynamically, thermally and mechanically stable. Further, the bandgap of SnP2 sheet can be effectively adjusted by applying strain. These results open the door for future applications in catalysis and optoelectronics.
Original language | English |
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Title of host publication | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 |
Publisher | IEEE |
Pages | 276-278 |
Number of pages | 3 |
ISBN (Electronic) | 978-1-5386-6508-4 |
ISBN (Print) | 978-1-5386-6509-1 |
DOIs | |
Publication status | Published - 1 Mar 2019 |
Event | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 12 Mar 2019 → 15 Mar 2019 |
Conference
Conference | 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 |
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Country/Territory | Singapore |
City | Singapore |
Period | 12/03/19 → 15/03/19 |
Keywords
- density functional theory
- monolayer SnP2
- stability
- tunable bandgap