Novel Two-dimensional Semiconductor Monolayer SnP2 with Tunable Bandgap

Yingying Zhang, Luqi Tao, Xiandong Li, Guoqi Zhang, Xianping Chen

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

Abstract

The electronic and mechanical properties of monolayer SnP2 are calculated by density functional theory (DFT), showing that monolayer SnP2 is a quasi-direct semiconductor with a moderate bandgap of 1.44 eV. The phonon dispersion, the molecular dynamics and the strain energy reveal that SnP2 is dynamically, thermally and mechanically stable. Further, the bandgap of SnP2 sheet can be effectively adjusted by applying strain. These results open the door for future applications in catalysis and optoelectronics.

Original languageEnglish
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherIEEE
Pages276-278
Number of pages3
ISBN (Electronic)978-1-5386-6508-4
ISBN (Print)978-1-5386-6509-1
DOIs
Publication statusPublished - 1 Mar 2019
Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
Duration: 12 Mar 201915 Mar 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/TerritorySingapore
CitySingapore
Period12/03/1915/03/19

Keywords

  • density functional theory
  • monolayer SnP2
  • stability
  • tunable bandgap

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