Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

K Nishiguchi, A Castellanos-Gomez, H Yamaguchi, A Fujiwara, HSJ van der Zant, GA Steele

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalApplied Physics Letters
Volume107
Issue number5
DOIs
Publication statusPublished - 2015

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