Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

K Nishiguchi, A Castellanos-Gomez, H Yamaguchi, A Fujiwara, HSJ van der Zant, GA Steele

    Research output: Contribution to journalArticleScientificpeer-review

    7 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)1-4
    Number of pages4
    JournalApplied Physics Letters
    Issue number5
    Publication statusPublished - 2015

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