Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

K Nishiguchi; A Castellanos-Gomez; H Yamaguchi; A Fujiwara; HSJ van der Zant; GA Steele

doi:10.1063/1.4927529

Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

K Nishiguchi, A Castellanos-Gomez, H Yamaguchi, A Fujiwara, HSJ van der Zant, GA Steele

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	1-4
Number of pages	4
Journal	Applied Physics Letters
Volume	107
Issue number	5
DOIs	https://doi.org/10.1063/1.4927529
Publication status	Published - 2015

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10.1063/1.4927529

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title = "Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode",

author = "K Nishiguchi and A Castellanos-Gomez and H Yamaguchi and A Fujiwara and {van der Zant}, HSJ and GA Steele",

note = "Harvest",

year = "2015",

doi = "10.1063/1.4927529",

language = "English",

volume = "107",

pages = "1--4",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode. / Nishiguchi, K; Castellanos-Gomez, A; Yamaguchi, H; Fujiwara, A; van der Zant, HSJ ; Steele, GA.

In: Applied Physics Letters, Vol. 107, No. 5, 2015, p. 1-4.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

AU - Nishiguchi, K

AU - Castellanos-Gomez, A

AU - Yamaguchi, H

AU - Fujiwara, A

AU - van der Zant, HSJ

AU - Steele, GA

N1 - Harvest

PY - 2015

Y1 - 2015

UR - http://resolver.tudelft.nl/uuid:32707453-b962-4dc6-9e6b-ea552093b37d

U2 - 10.1063/1.4927529

DO - 10.1063/1.4927529

M3 - Article

VL - 107

SP - 1

EP - 4

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -

Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

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