TY - JOUR
T1 - On Basic Boolean Function Graphene Nanoribbon Conductance Mapping
AU - Jiang, Yande
AU - Laurenciu, Nicoleta Cucu
AU - Cotofana, Sorin Dan
N1 - Accepted Author Manuscript
PY - 2019
Y1 - 2019
N2 - In this paper, we augment a trapezoidal Quantum Point Contact topology with top gates to form a butterfly Graphene Nanoribbon (GNR) structure and demonstrate that by adjusting its topology, its conductance map can mirror basic Boolean functions, thus one can use such structures instead of transistors to build carbon-based gates and circuits. We first identify by means of Design Space Exploration specific GNR topologies for 2- and 3-input {AND, NAND, OR, NOR, XOR, XNOR} and demonstrate by means of the Non-Equilibrium Green Function - Landauer based simulations that butterfly GNR-based structures operating at V
DD = 0.2 V outperform 7 nm @ V
DD = 0.7 V CMOS counterparts by 2 to 3, 1 to 2, and 3 to 4, orders of magnitude in terms of delay, power consumption, and power-delay product, respectively, while requiring 2 orders of magnitude less active area. Subsequently, we investigate the effect of V
DD variations and the V
DD value lower bound. We demonstrate that the NOR butterfly GNR structures are quite robust as their conductance and delay are changing by no more than 2% and 6%, respectively, and that AND and NOR GNR geometries can operate even at 10 mV. Finally, we consider the aspects related to the practical realization of the proposed structures and conclude that even if there are still hurdles on the road ahead the latest graphene fabrication technology developments, e.g., surface-assisted synthesis, our proposal opens an alternative towards effective carbon-based nanoelectronic circuits and applications.
AB - In this paper, we augment a trapezoidal Quantum Point Contact topology with top gates to form a butterfly Graphene Nanoribbon (GNR) structure and demonstrate that by adjusting its topology, its conductance map can mirror basic Boolean functions, thus one can use such structures instead of transistors to build carbon-based gates and circuits. We first identify by means of Design Space Exploration specific GNR topologies for 2- and 3-input {AND, NAND, OR, NOR, XOR, XNOR} and demonstrate by means of the Non-Equilibrium Green Function - Landauer based simulations that butterfly GNR-based structures operating at V
DD = 0.2 V outperform 7 nm @ V
DD = 0.7 V CMOS counterparts by 2 to 3, 1 to 2, and 3 to 4, orders of magnitude in terms of delay, power consumption, and power-delay product, respectively, while requiring 2 orders of magnitude less active area. Subsequently, we investigate the effect of V
DD variations and the V
DD value lower bound. We demonstrate that the NOR butterfly GNR structures are quite robust as their conductance and delay are changing by no more than 2% and 6%, respectively, and that AND and NOR GNR geometries can operate even at 10 mV. Finally, we consider the aspects related to the practical realization of the proposed structures and conclude that even if there are still hurdles on the road ahead the latest graphene fabrication technology developments, e.g., surface-assisted synthesis, our proposal opens an alternative towards effective carbon-based nanoelectronic circuits and applications.
KW - carbon-nanoelectronics.
KW - GNR
KW - Graphene
KW - graphene-based Boolean Gates
UR - http://www.scopus.com/inward/record.url?scp=85058627327&partnerID=8YFLogxK
U2 - 10.1109/TCSI.2018.2882310
DO - 10.1109/TCSI.2018.2882310
M3 - Article
AN - SCOPUS:85058627327
VL - 66
SP - 1948
EP - 1959
JO - IEEE Transactions on Circuits and Systems Part 1: Regular Papers
JF - IEEE Transactions on Circuits and Systems Part 1: Regular Papers
SN - 1549-8328
IS - 5
M1 - 8574057
ER -