On the Robustness of Memristor Based Logic Gates

INIS

• comparative evaluations 33%
• constraints 66%
• control 33%
• density 33%
• design 100%
• devices 33%
• errors 33%
• graphene 33%
• leakage 33%
• logic circuits 33%
• nanotubes 33%
• nanowires 33%
• power 66%
• proposals 33%
• reliability 33%
• scaling 33%
• simulation 66%
• spices 33%
• transistors 33%
• values 33%
• variations 66%
• voltage 33%

Engineering

• Constraint Parameter 50%
• Design Parameter 100%
• Error 50%
• Functionality 50%
• Graphene 50%
• High Integration Density 50%
• Logic Circuit 50%
• Nanotube 50%
• Parasitic Resistance 50%
• Process Variation 50%
• Promising Candidate 50%
• Robust Design 50%
• Scaling 50%
• SPICE 50%

Material Science

• Density 33%
• Devices 33%
• Logic Gate 100%
• Nanowire 33%
• Transistor 33%