Optical study of the band structure of wurtzite GaP nanowires

S. Assali; J. Greil; I. Zardo; A. Belabbes; M. W.A. De Moor; Sebastian Koelling; P. M. Koenraad; F. Bechstedt; E. P.A.M. Bakkers; J. E.M. Haverkort

doi:10.1063/1.4959147

Optical study of the band structure of wurtzite GaP nanowires

S. Assali, J. Greil, I. Zardo, A. Belabbes, M. W.A. De Moor, Sebastian Koelling, P. M. Koenraad, F. Bechstedt, E. P.A.M. Bakkers, J. E.M. Haverkort

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Abstract

We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140-2.164-2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ_8C conduction band edge.

Original language	English
Article number	044304
Number of pages	11
Journal	Journal of Applied Physics
Volume	120
Issue number	4
DOIs	https://doi.org/10.1063/1.4959147
Publication status	Published - 28 Jul 2016

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title = "Optical study of the band structure of wurtzite GaP nanowires",

abstract = "We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140-2.164-2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.",

author = "S. Assali and J. Greil and I. Zardo and A. Belabbes and {De Moor}, {M. W.A.} and Sebastian Koelling and Koenraad, {P. M.} and F. Bechstedt and Bakkers, {E. P.A.M.} and Haverkort, {J. E.M.}",

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T1 - Optical study of the band structure of wurtzite GaP nanowires

AU - Assali, S.

AU - Greil, J.

AU - Zardo, I.

AU - Belabbes, A.

AU - De Moor, M. W.A.

AU - Koelling, Sebastian

AU - Koenraad, P. M.

AU - Bechstedt, F.

AU - Bakkers, E. P.A.M.

AU - Haverkort, J. E.M.

PY - 2016/7/28

Y1 - 2016/7/28

N2 - We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140-2.164-2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.

AB - We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140-2.164-2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.

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VL - 120

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 044304

ER -

Optical study of the band structure of wurtzite GaP nanowires

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