Optimization of the tilt angles in reflection-mode ptychographic reconstructions by leveraging the flexibility of automatic differentiation-based modeling

Ptychography as a means of lensless imaging is used in wafer metrology applications using Extreme Ultraviolet (EUV) light, where use of high quality optics is out-of-scope. To obtain sufficient diffraction intensity, reflection geometries with shallow (ca. 20 degrees) grazing incidence angles are used, which require re-sampling the diffraction data in a process called tilted plane correction (TPC). The tilt angle used for TPC is conventionally obtained through either experimentally tricky calibration, manual estimation based on diffraction pattern symmetry, although computational approaches are emerging. In this work we offer an improved numerical optimization approach as an alternative to TPC, where we use the flexibility offered by our Automatic Differentiation (AD)-based ptychography approach to include the data resampling into the forward model to learn the tilt angle. We demonstrate convergence of the approach across a range of incidence angles on simulated and experimental data obtained on an EUV beamline with either a high-harmonic generation (HHG)-based or a visible light source.