Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances

Martijn van Sebille, Jort Allebrandi, Jim Quik, René A C M M van Swaaij, Frans D. Tichelaar, Miro Zeman

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)
14 Downloads (Pure)

Abstract

We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of the annealed film as input parameters. Multiplying this probability with the nanocrystal density results in the density of non-touching and closely spaced silicon nanocrystals. This method can be used to estimate the best as-deposited stoichiometry in order to achieve optimal nanocrystal density and spacing after a subsequent annealing step.

Original languageEnglish
Article number355
Pages (from-to)1-7
Number of pages7
JournalNanoscale Research Letters
Volume11
Issue number1
DOIs
Publication statusPublished - 1 Dec 2016

Keywords

  • Inter-particle distance
  • Silicon nanocrystal
  • Silicon oxide
  • Spacing
  • Stoichiometry

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