Abstract
We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of the annealed film as input parameters. Multiplying this probability with the nanocrystal density results in the density of non-touching and closely spaced silicon nanocrystals. This method can be used to estimate the best as-deposited stoichiometry in order to achieve optimal nanocrystal density and spacing after a subsequent annealing step.
Original language | English |
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Article number | 355 |
Pages (from-to) | 1-7 |
Number of pages | 7 |
Journal | Nanoscale Research Letters |
Volume | 11 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Dec 2016 |
Keywords
- Inter-particle distance
- Silicon nanocrystal
- Silicon oxide
- Spacing
- Stoichiometry