Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances

Martijn van Sebille; Jort Allebrandi; Jim Quik; René A C M M van Swaaij; Frans D. Tichelaar; Miro Zeman

doi:10.1186/s11671-016-1567-6

Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances

Martijn van Sebille^*, Jort Allebrandi, Jim Quik, René A C M M van Swaaij, Frans D. Tichelaar, Miro Zeman

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of the annealed film as input parameters. Multiplying this probability with the nanocrystal density results in the density of non-touching and closely spaced silicon nanocrystals. This method can be used to estimate the best as-deposited stoichiometry in order to achieve optimal nanocrystal density and spacing after a subsequent annealing step.

Original language	English
Article number	355
Pages (from-to)	1-7
Number of pages	7
Journal	Nanoscale Research Letters
Volume	11
Issue number	1
DOIs	https://doi.org/10.1186/s11671-016-1567-6
Publication status	Published - 1 Dec 2016

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Inter-particle distance
Silicon nanocrystal
Silicon oxide
Spacing
Stoichiometry

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10.1186/s11671-016-1567-6

s11671-016-1567-6Final published version, 1.67 MBLicence: CC BY

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abstract = "We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of the annealed film as input parameters. Multiplying this probability with the nanocrystal density results in the density of non-touching and closely spaced silicon nanocrystals. This method can be used to estimate the best as-deposited stoichiometry in order to achieve optimal nanocrystal density and spacing after a subsequent annealing step.",

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AU - van Sebille, Martijn

AU - Allebrandi, Jort

AU - Quik, Jim

AU - van Swaaij, René A C M M

AU - Tichelaar, Frans D.

AU - Zeman, Miro

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N2 - We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of the annealed film as input parameters. Multiplying this probability with the nanocrystal density results in the density of non-touching and closely spaced silicon nanocrystals. This method can be used to estimate the best as-deposited stoichiometry in order to achieve optimal nanocrystal density and spacing after a subsequent annealing step.

AB - We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of the annealed film as input parameters. Multiplying this probability with the nanocrystal density results in the density of non-touching and closely spaced silicon nanocrystals. This method can be used to estimate the best as-deposited stoichiometry in order to achieve optimal nanocrystal density and spacing after a subsequent annealing step.

KW - Inter-particle distance

KW - Silicon nanocrystal

KW - Silicon oxide

KW - Spacing

KW - Stoichiometry

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Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances

Abstract

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Keywords

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