Orientation dependent electron mobility behavior with downscaling of Fin-width in double and triple gate SOI FinFETS

M Poljak, V Jovanovic, T Suligoj

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	English
Title of host publication	Proceedings 11th International conference on ultimate integration on silicon (ULIS)
Editors	S Roy et al
Place of Publication	Glasgow, Scotland
Pages	1-3
Number of pages	3
Publication status	Published - 2010
Event	11th International conference on ultimate integration on silicon (ULIS), Glasgow, Scotland - Glasgow, Scotland Duration: 17 Mar 2010 → 19 Mar 2010

Conference	11th International conference on ultimate integration on silicon (ULIS), Glasgow, Scotland
Period	17/03/10 → 19/03/10

Keywords

@inproceedings{08398ed684c44fb6a68e6eb2ad4590fe,

title = "Orientation dependent electron mobility behavior with downscaling of Fin-width in double and triple gate SOI FinFETS",

keywords = "Geen BTA classificatie",

author = "M Poljak and V Jovanovic and T Suligoj",

year = "2010",

language = "English",

pages = "1--3",

editor = "{Roy et al}, S",

booktitle = "Proceedings 11th International conference on ultimate integration on silicon (ULIS)",

note = "11th International conference on ultimate integration on silicon (ULIS), Glasgow, Scotland ; Conference date: 17-03-2010 Through 19-03-2010",

}

Poljak, M, Jovanovic, V & Suligoj, T 2010, Orientation dependent electron mobility behavior with downscaling of Fin-width in double and triple gate SOI FinFETS. in S Roy et al (ed.), Proceedings 11th International conference on ultimate integration on silicon (ULIS). Glasgow, Scotland, pp. 1-3, 11th International conference on ultimate integration on silicon (ULIS), Glasgow, Scotland, 17/03/10.

Orientation dependent electron mobility behavior with downscaling of Fin-width in double and triple gate SOI FinFETS. / Poljak, M; Jovanovic, V; Suligoj, T.
Proceedings 11th International conference on ultimate integration on silicon (ULIS). ed. / S Roy et al. Glasgow, Scotland, 2010. p. 1-3.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Orientation dependent electron mobility behavior with downscaling of Fin-width in double and triple gate SOI FinFETS

AU - Poljak, M

AU - Jovanovic, V

AU - Suligoj, T

PY - 2010

Y1 - 2010

KW - Geen BTA classificatie

UR - http://www.elec.gla.ac.uk/ulis2010/programme.php

M3 - Conference contribution

SP - 1

EP - 3

BT - Proceedings 11th International conference on ultimate integration on silicon (ULIS)

A2 - Roy et al, S

CY - Glasgow, Scotland

T2 - 11th International conference on ultimate integration on silicon (ULIS), Glasgow, Scotland

Y2 - 17 March 2010 through 19 March 2010

ER -