Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd(0.52)Sr(0.48)MnO(3) thin films

VG Prokhorov; GG Kaminsky; JM Kim; TW Eom; JS Park; YP Lee; V Svetchnikov; GG Levtchenko; YM Nikolaenko; VA Khokhlov

doi:10.1063/1.3592229

Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd(0.52)Sr(0.48)MnO(3) thin films

VG Prokhorov
, GG Kaminsky
, JM Kim
, TW Eom
, JS Park
, YP Lee
, V Svetchnikov
, GG Levtchenko
, YM Nikolaenko
, VA Khokhlov

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

Nd(0.52)Sr(0.48)MnO(3) films of various thicknesses have been prepared by dc magnetron sputtering on single crystal LaAlO(3) (001) substrates. Reducing the film thickness leads to a significant suppression of ferromagnetic (FM) ordering and the Curie point falls below the antiferromagnetic (AFM) transition temperature. When this occurs, a huge rise of the magnetoresistance ratio from 400 to 60 000% is observed in an applied magnetic field of 5 T. We surmise that this new kind of the enhanced colossal magnetoresistance effect originates in the FM/AFM competition and the collapse of the charge-ordered state at high magnetic fields, rather than in the regular double-exchange mechanism.

Original language	English
Pages (from-to)	305-308
Number of pages	4
Journal	Low Temperature Physics
Volume	37
Issue number	4
DOIs	https://doi.org/10.1063/1.3592229
Publication status	Published - 2011

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CWTS JFIS < 0.75

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10.1063/1.3592229

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title = "Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd(0.52)Sr(0.48)MnO(3) thin films",

abstract = "Nd(0.52)Sr(0.48)MnO(3) films of various thicknesses have been prepared by dc magnetron sputtering on single crystal LaAlO(3) (001) substrates. Reducing the film thickness leads to a significant suppression of ferromagnetic (FM) ordering and the Curie point falls below the antiferromagnetic (AFM) transition temperature. When this occurs, a huge rise of the magnetoresistance ratio from 400 to 60 000\% is observed in an applied magnetic field of 5 T. We surmise that this new kind of the enhanced colossal magnetoresistance effect originates in the FM/AFM competition and the collapse of the charge-ordered state at high magnetic fields, rather than in the regular double-exchange mechanism.",

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doi = "10.1063/1.3592229",

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T1 - Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd(0.52)Sr(0.48)MnO(3) thin films

AU - Prokhorov, VG

AU - Kaminsky, GG

AU - Kim, JM

AU - Eom, TW

AU - Park, JS

AU - Lee, YP

AU - Svetchnikov, V

AU - Levtchenko, GG

AU - Nikolaenko, YM

AU - Khokhlov, VA

PY - 2011

Y1 - 2011

N2 - Nd(0.52)Sr(0.48)MnO(3) films of various thicknesses have been prepared by dc magnetron sputtering on single crystal LaAlO(3) (001) substrates. Reducing the film thickness leads to a significant suppression of ferromagnetic (FM) ordering and the Curie point falls below the antiferromagnetic (AFM) transition temperature. When this occurs, a huge rise of the magnetoresistance ratio from 400 to 60 000% is observed in an applied magnetic field of 5 T. We surmise that this new kind of the enhanced colossal magnetoresistance effect originates in the FM/AFM competition and the collapse of the charge-ordered state at high magnetic fields, rather than in the regular double-exchange mechanism.

AB - Nd(0.52)Sr(0.48)MnO(3) films of various thicknesses have been prepared by dc magnetron sputtering on single crystal LaAlO(3) (001) substrates. Reducing the film thickness leads to a significant suppression of ferromagnetic (FM) ordering and the Curie point falls below the antiferromagnetic (AFM) transition temperature. When this occurs, a huge rise of the magnetoresistance ratio from 400 to 60 000% is observed in an applied magnetic field of 5 T. We surmise that this new kind of the enhanced colossal magnetoresistance effect originates in the FM/AFM competition and the collapse of the charge-ordered state at high magnetic fields, rather than in the regular double-exchange mechanism.

KW - CWTS JFIS < 0.75

U2 - 10.1063/1.3592229

DO - 10.1063/1.3592229

M3 - Article

SN - 1063-777X

VL - 37

SP - 305

EP - 308

JO - Low Temperature Physics

JF - Low Temperature Physics

IS - 4

ER -

Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd(0.52)Sr(0.48)MnO(3) thin films

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