Origin of charged gap states in a-Si:H and their evolution during light soaking

V Nadazdy, M Zeman

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	1-6
Number of pages	6
Journal	Physical Review B (Condensed Matter and Materials Physics)
Volume	69
Publication status	Published - 2004

ed.is niet bekend

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Origin of charged gap states in a-Si:H and their evolution during light soaking",

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author = "V Nadazdy and M Zeman",

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year = "2004",

language = "Undefined/Unknown",

volume = "69",

pages = "1--6",

journal = "Physical Review B (Condensed Matter and Materials Physics)",

issn = "1098-0121",

publisher = "American Physical Society",

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TY - JOUR

T1 - Origin of charged gap states in a-Si:H and their evolution during light soaking

AU - Nadazdy, V

AU - Zeman, M

N1 - ed.is niet bekend

PY - 2004

Y1 - 2004

KW - ZX CWTS 1.00 <= JFIS < 3.00

M3 - Article

SN - 1098-0121

VL - 69

SP - 1

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JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

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