@inproceedings{c846fb1a27784c2a9bf5bb655e048725,
title = "Oxygen-plasma-based digital etching for gan/algan high electron mobility transistors",
abstract = "Digital etching is an effective method to lower dry etch damages in A1GaN/GaN HEMTs. This work systematically investigated O2-plasma-based digital etching of AlGaN and p-GaN. AlN layers were used as the etch stop layers in the AlGaN etch. Important process aspects such as the use of the AlN layers, the RF power, the oxygen flow rate, the oxidation time and the resulting roughness were studied. These are technically relevant to obtain controllable, uniform etch surfaces with low surface damages for better HEMT performance.",
author = "Jingyi Wu and Hongyu Yu and Yang Jiang and Zeyu Wan and Siqi Lei and Cheng, \{Wei Chih\} and Guangnan Zhou and Robert Sokolovskij and Qing Wang and Xia, \{Guangrui Maggie\}",
year = "2019",
doi = "10.1109/ASICON47005.2019.8983678",
language = "English",
series = "Proceedings of International Conference on ASIC",
publisher = "IEEE",
editor = "Fan Ye and Ting-Ao Tang",
booktitle = "Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019",
address = "United States",
note = "13th IEEE International Conference on ASIC, ASICON 2019 ; Conference date: 29-10-2019 Through 01-11-2019",
}