INIS
gallium arsenides
100%
field effect transistors
100%
metals
100%
semiconductor materials
100%
nanowires
100%
devices
50%
shells
33%
oxides
33%
barriers
33%
performance
33%
doped materials
33%
operation
16%
transistors
16%
fabrication
16%
gallium antimonides
16%
interfaces
16%
peaks
16%
khz range
16%
charges
16%
trapping
16%
Material Science
Field Effect Transistor
100%
Semiconductor Material
100%
Metal
100%
Nanowire
100%
Gallium Arsenide
100%
Devices
50%
Schottky Barrier
33%
Contact Resistance
33%
Electronics
16%
Electronic Circuit
16%
Metal-Oxide-Semiconductor Field-Effect Transistor
16%
Transistor
16%
Complementary Metal-Oxide-Semiconductor Device
16%
Charge Trapping
16%
Engineering
Field-Effect Transistor
100%
Semiconductor
100%
Obtains
33%
Complementary Metal-Oxide-Semiconductor
16%
Networks (Circuits)
16%