TY - JOUR
T1 - P-type β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product
AU - Jiang, Z.X.
AU - Wu, Z.Y.
AU - Ma, C.C.
AU - Deng, J.N.
AU - Zhang, H.
AU - Xu, Y.
AU - Ye, J.D.
AU - Fang, Z.L.
AU - Zhang, G.Q
AU - Kang, J.Y.
AU - Zhang, T.Y.
PY - 2020
Y1 - 2020
N2 - P-type β-Ga2O3 films deep-ultraviolet (DUV) solar-blind metal-semiconductor-metal (MSM) photodetectors (PDs) are fabricated with extremely high photoresponsivity (9.5 × 103 A/W), external quantum efficiency (4.7 × 106%), detectivity (1.5 × 1015 Jones), and gain-bandwidth product (106) at 5 V bias, very low noise equivalent power (4.9 × 10−16 W/Hz1/2) and high specific detectivity (1.9 × 1013 Jones) at 1 kHz and 3 V bias. The excellent performances of the p-type β-Ga2O3 DUV MSM PDs are attributed to the charge carrier multiplication via collective excitation of aggregated excitons and/or electron-hole liquid within the fabricated high-quality p-type β-Ga2O3 films, which possess the room-temperature Hall resistivity of 52.6 Ωcm, the hole mobility of 41.4 cm2/V⋅s, and the hole concentration of 2.86 × 1015 cm−3. The unprecedentedly high photoresponsivity and detectivity and the carrier multiplication mechanism in high-quality p-type β-Ga2O3 films pave a novel way to fabricate super sensitive DUV PDs based on p-type wide-bandgap oxide semiconductors.
AB - P-type β-Ga2O3 films deep-ultraviolet (DUV) solar-blind metal-semiconductor-metal (MSM) photodetectors (PDs) are fabricated with extremely high photoresponsivity (9.5 × 103 A/W), external quantum efficiency (4.7 × 106%), detectivity (1.5 × 1015 Jones), and gain-bandwidth product (106) at 5 V bias, very low noise equivalent power (4.9 × 10−16 W/Hz1/2) and high specific detectivity (1.9 × 1013 Jones) at 1 kHz and 3 V bias. The excellent performances of the p-type β-Ga2O3 DUV MSM PDs are attributed to the charge carrier multiplication via collective excitation of aggregated excitons and/or electron-hole liquid within the fabricated high-quality p-type β-Ga2O3 films, which possess the room-temperature Hall resistivity of 52.6 Ωcm, the hole mobility of 41.4 cm2/V⋅s, and the hole concentration of 2.86 × 1015 cm−3. The unprecedentedly high photoresponsivity and detectivity and the carrier multiplication mechanism in high-quality p-type β-Ga2O3 films pave a novel way to fabricate super sensitive DUV PDs based on p-type wide-bandgap oxide semiconductors.
KW - Exciton
KW - Noise and gain-bandwidth product
KW - P-type electrical properties
KW - Photoresponsivity and detectivity
KW - Solar-blind photodetector
UR - http://www.scopus.com/inward/record.url?scp=85087021449&partnerID=8YFLogxK
U2 - 10.1016/j.mtphys.2020.100226
DO - 10.1016/j.mtphys.2020.100226
M3 - Article
AN - SCOPUS:85087021449
VL - 14
SP - 1
EP - 9
JO - Materials Today Physics
JF - Materials Today Physics
M1 - 100226
ER -