Parasitic memory effect in CMOS SRaMs

IS Irobi; Z Al-Ars; M Renovell

Parasitic memory effect in CMOS SRaMs

IS Irobi, Z Al-Ars, M Renovell

Computer Engineering

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

3 Citations (Scopus)

Original language	English
Title of host publication	5th Intl. design and test workshop
Editors	I Elahi, A Ivanov, Y Zorian, A Salem
Place of Publication	Piscataway
Publisher	IEEE
Pages	134-142
Number of pages	9
Publication status	Published - 2010
Event	IDT'10 - Piscataway Duration: 14 Dec 2010 → 15 Dec 2010

Publication series

Name
Publisher	IEEE

Conference

Conference	IDT'10
Period	14/12/10 → 15/12/10

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Cite this

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title = "Parasitic memory effect in CMOS SRaMs",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "IS Irobi and Z Al-Ars and M Renovell",

year = "2010",

language = "English",

publisher = "IEEE",

pages = "134--142",

editor = "I Elahi and A Ivanov and Y Zorian and A Salem",

booktitle = "5th Intl. design and test workshop",

address = "United States",

note = "IDT'10 ; Conference date: 14-12-2010 Through 15-12-2010",

}

TY - GEN

T1 - Parasitic memory effect in CMOS SRaMs

AU - Irobi, IS

AU - Al-Ars, Z

AU - Renovell, M

PY - 2010

Y1 - 2010

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

UR - https://idt.adec.ac.ae

M3 - Conference contribution

SP - 134

EP - 142

BT - 5th Intl. design and test workshop

A2 - Elahi, I

A2 - Ivanov, A

A2 - Zorian, Y

A2 - Salem, A

PB - IEEE

CY - Piscataway

T2 - IDT'10

Y2 - 14 December 2010 through 15 December 2010

ER -

Parasitic memory effect in CMOS SRaMs

Publication series

Conference

Keywords

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Cite this