An alloy based on the group IV elements germanium and tin has the potential of yielding an earth-abundant low bandgap energy semiconductor material with applications in the fields of micro-electronics, optics, photonics and photovoltaics. In this work, the first steps towards the plasma enhanced chemical vapour deposition (PECVD) processing of a chemically stable, low bandgap energy and intrinsic GeSn:H alloy are presented. Using a tetramethyltin (TMT) precursor, over 70 PECVD processed films are presented. It was observed that the opto-electrical film properties are a result of the material phase fraction, void fraction, hydrogenation and the level of tin and carbon integration. In particular, managing the carbon integration from the TMT precursor into the material is crucial for obtaining low-bandgap and chemically stable materials. The collective findings from this work will aid in successfully identifying PECVD processing pathways for GeSn:H.
- Amorphous films
- Germanium-tin GeSn
- Hydrogenated germanium Ge:H
- Low bandgap energy
- Plasma enhanced chemical vapour deposition