Phosphorus Oxidation Controls Epitaxial Shell Growth in InP/ZnSe Quantum Dots

R.F. Ubbink; Tom  Speelman; Daniel  Arenas Esteban; M. van Leeuwen; M. Stam; Sara Bals; Gilles A.  De Wijs; Ernst R H van Eck; A.J. Houtepen

doi:10.1021/acsnano.4c13110

Phosphorus Oxidation Controls Epitaxial Shell Growth in InP/ZnSe Quantum Dots

R.F. Ubbink, Tom Speelman, Daniel Arenas Esteban, M. van Leeuwen, M. Stam, Sara Bals, Gilles A. De Wijs, Ernst R H van Eck, A.J. Houtepen^*

^*Corresponding author for this work

ChemE/Opto-electronic Materials

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

InP/ZnSe/ZnS core/shell/shell quantum dots are the most investigated quantum dot material for commercial applications involving visible light emission. The inner InP/ZnSe interface is complex since it is not charge balanced, and the InP surface is prone to oxidation. The role of oxidative defects at this interface has remained a topic of debate, with conflicting reports of both detrimental and beneficial effects on the quantum dot properties. In this study we probe the structure of the InP/ZnSe interface at the atomic level using 31P, 77Se and 17O ssNMR and HAADF-STEM. We observe clear differences in Se NMR spectra and crystal orientation of core and shell when the InP/ZnSe is oxidized on purpose. High levels of interface oxidation result in an amorphous phosphate layer at the interface, which inhibits epitaxial growth of the ZnSe shell.

Original language	English
Pages (from-to)	1150-1158
Number of pages	9
Journal	ACS Nano
Volume	19
Issue number	1
DOIs	https://doi.org/10.1021/acsnano.4c13110
Publication status	Published - 2025

Keywords

quantum dots
indium phosphide
zinc selenide
photoluminescence
oxidation
interface
solid state NMR

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10.1021/acsnano.4c13110

ubbink-et-al-2025-phosphorus-oxidation-controls-epitaxial-shell-growth-in-inp-znse-quantum-dotsFinal published version, 5.02 MBLicence: CC BY

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title = "Phosphorus Oxidation Controls Epitaxial Shell Growth in InP/ZnSe Quantum Dots",

abstract = "InP/ZnSe/ZnS core/shell/shell quantum dots are the most investigated quantum dot material for commercial applications involving visible light emission. The inner InP/ZnSe interface is complex since it is not charge balanced, and the InP surface is prone to oxidation. The role of oxidative defects at this interface has remained a topic of debate, with conflicting reports of both detrimental and beneficial effects on the quantum dot properties. In this study we probe the structure of the InP/ZnSe interface at the atomic level using 31P, 77Se and 17O ssNMR and HAADF-STEM. We observe clear differences in Se NMR spectra and crystal orientation of core and shell when the InP/ZnSe is oxidized on purpose. High levels of interface oxidation result in an amorphous phosphate layer at the interface, which inhibits epitaxial growth of the ZnSe shell.",

keywords = "quantum dots, indium phosphide, zinc selenide, photoluminescence, oxidation, interface, solid state NMR",

author = "R.F. Ubbink and Tom Speelman and {Arenas Esteban}, Daniel and {van Leeuwen}, M. and M. Stam and Sara Bals and {De Wijs}, {Gilles A.} and {van Eck}, {Ernst R H} and A.J. Houtepen",

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AU - Ubbink, R.F.

AU - Speelman, Tom

AU - Arenas Esteban, Daniel

AU - van Leeuwen, M.

AU - Stam, M.

AU - Bals, Sara

AU - De Wijs, Gilles A.

AU - van Eck, Ernst R H

AU - Houtepen, A.J.

PY - 2025

Y1 - 2025

N2 - InP/ZnSe/ZnS core/shell/shell quantum dots are the most investigated quantum dot material for commercial applications involving visible light emission. The inner InP/ZnSe interface is complex since it is not charge balanced, and the InP surface is prone to oxidation. The role of oxidative defects at this interface has remained a topic of debate, with conflicting reports of both detrimental and beneficial effects on the quantum dot properties. In this study we probe the structure of the InP/ZnSe interface at the atomic level using 31P, 77Se and 17O ssNMR and HAADF-STEM. We observe clear differences in Se NMR spectra and crystal orientation of core and shell when the InP/ZnSe is oxidized on purpose. High levels of interface oxidation result in an amorphous phosphate layer at the interface, which inhibits epitaxial growth of the ZnSe shell.

AB - InP/ZnSe/ZnS core/shell/shell quantum dots are the most investigated quantum dot material for commercial applications involving visible light emission. The inner InP/ZnSe interface is complex since it is not charge balanced, and the InP surface is prone to oxidation. The role of oxidative defects at this interface has remained a topic of debate, with conflicting reports of both detrimental and beneficial effects on the quantum dot properties. In this study we probe the structure of the InP/ZnSe interface at the atomic level using 31P, 77Se and 17O ssNMR and HAADF-STEM. We observe clear differences in Se NMR spectra and crystal orientation of core and shell when the InP/ZnSe is oxidized on purpose. High levels of interface oxidation result in an amorphous phosphate layer at the interface, which inhibits epitaxial growth of the ZnSe shell.

KW - quantum dots

KW - indium phosphide

KW - zinc selenide

KW - photoluminescence

KW - oxidation

KW - interface

KW - solid state NMR

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SP - 1150

EP - 1158

JO - ACS Nano

JF - ACS Nano

IS - 1

ER -

Phosphorus Oxidation Controls Epitaxial Shell Growth in InP/ZnSe Quantum Dots

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Keywords

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