Photoluminescence of phosphorus atomic layer doped Ge grown on Si

Yuji Yamamoto, Li Wei Nien, Giovanni Capellini, Michele Virgilio, Ioan Costina, Markus Andreas Schubert, Winfried Seifert, Giordano Scappucci, Diego Sabbagh, More Authors

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 ×1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ∼0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ∼2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

Original languageEnglish
Article number104005
Number of pages7
JournalSemiconductor Science and Technology
Volume32
Issue number10
DOIs
Publication statusPublished - 2017

Keywords

  • atomic layer doping
  • chemical vapor deposition
  • epitaxy
  • gemanium
  • phosporus
  • photoluminescence

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