Photoluminescence properties of Pr3+, Sm3+ and Tb3+ doped SrAlSi4N7 and energy level locations of rare-earth ions in SrAlSi4N7

Z.J. Zhang, OM ten Kate, A Delsing, P Dorenbos, J.T. Zhao, HT Hintzen

Research output: Contribution to journal › Article › Scientific › peer-review

29 Citations (Scopus)

Original language	English
Pages (from-to)	7952-7959
Number of pages	8
Journal	Journal of Materials Chemistry C: materials for optical and electronic devices
Volume	2
DOIs	https://doi.org/10.1039/c4tc00538d
Publication status	Published - 2014

Access to Document

@article{452e7c2fe1b946b9905e2ae73fa4a418,

title = "Photoluminescence properties of Pr3+, Sm3+ and Tb3+ doped SrAlSi4N7 and energy level locations of rare-earth ions in SrAlSi4N7",

author = "Z.J. Zhang and {ten Kate}, OM and A Delsing and P Dorenbos and J.T. Zhao and HT Hintzen",

year = "2014",

doi = "10.1039/c4tc00538d",

language = "English",

volume = "2",

pages = "7952--7959",

journal = "Journal of Materials Chemistry C: materials for optical and electronic devices",

issn = "2050-7526",

publisher = "Royal Society of Chemistry",

}

TY - JOUR

T1 - Photoluminescence properties of Pr3+, Sm3+ and Tb3+ doped SrAlSi4N7 and energy level locations of rare-earth ions in SrAlSi4N7

AU - Zhang, Z.J.

AU - ten Kate, OM

AU - Delsing, A

AU - Dorenbos, P

AU - Zhao, J.T.

AU - Hintzen, HT

PY - 2014

Y1 - 2014

U2 - 10.1039/c4tc00538d

DO - 10.1039/c4tc00538d

M3 - Article

SN - 2050-7526

VL - 2

SP - 7952

EP - 7959

JO - Journal of Materials Chemistry C: materials for optical and electronic devices

JF - Journal of Materials Chemistry C: materials for optical and electronic devices

ER -