Photoluminescence properties of Pr3+, Sm3+ and Tb3+ doped SrAlSi4N7 and energy level locations of rare-earth ions in SrAlSi4N7

Z.J. Zhang, OM ten Kate, A Delsing, P Dorenbos, J.T. Zhao, HT Hintzen

Research output: Contribution to journalArticleScientificpeer-review

22 Citations (Scopus)
Original languageEnglish
Pages (from-to)7952-7959
Number of pages8
JournalJournal of Materials Chemistry C: materials for optical and electronic devices
Volume2
DOIs
Publication statusPublished - 2014

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