Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se2 solar cells

MJ Theelen; T Boumans; F Stegeman; F Colberts; A Illiberi; J van Berkum; N Barreau; Z Vroon; M Zeman

doi:10.1016/j.tsf.2013.10.149

Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se2 solar cells

MJ Theelen, T Boumans, F Stegeman, F Colberts, A Illiberi, J van Berkum, N Barreau, Z Vroon, M Zeman

Photovoltaic Materials and Devices

Research output: Contribution to journal › Article › Scientific › peer-review

42 Citations (Scopus)

Original language	English
Pages (from-to)	530-540
Number of pages	11
Journal	Thin Solid Films
Volume	550
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2013.10.149
Publication status	Published - 2014

Bibliographical note

Harvest

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10.1016/j.tsf.2013.10.149

Cite this

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title = "Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se2 solar cells",

author = "MJ Theelen and T Boumans and F Stegeman and F Colberts and A Illiberi and {van Berkum}, J and N Barreau and Z Vroon and M Zeman",

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language = "English",

volume = "550",

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journal = "Thin Solid Films",

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AU - Theelen, MJ

AU - Boumans, T

AU - Stegeman, F

AU - Colberts, F

AU - Illiberi, A

AU - van Berkum, J

AU - Barreau, N

AU - Vroon, Z

AU - Zeman, M

N1 - Harvest

PY - 2014

Y1 - 2014

U2 - 10.1016/j.tsf.2013.10.149

DO - 10.1016/j.tsf.2013.10.149

M3 - Article

SN - 0040-6090

VL - 550

SP - 530

EP - 540

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -