Physical mechanisms of electron mobility behavior in ultra-thin body double gate MOSFETS with (100) and (111) active surfaces

M Poljak, V Jovanovic, T Suligoj

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	English
Title of host publication	Proceedings 46th International Conference on Microelectronics, Devices and Materials
Editors	D Donlagic et al
Place of Publication	Ljubljana, Slovenia
Publisher	MIDEM
Pages	1-4
Number of pages	4
Publication status	Published - 2010
Event	MIDEM Conference 2010, radenci, Slovenia - Ljubljana, Slovenia Duration: 29 Sept 2010 → 1 Oct 2010

Name
Publisher	MIDEM

Conference	MIDEM Conference 2010, radenci, Slovenia
Period	29/09/10 → 1/10/10

Keywords

@inproceedings{4176084a3bc0486da04bb9ca2eaefb92,

title = "Physical mechanisms of electron mobility behavior in ultra-thin body double gate MOSFETS with (100) and (111) active surfaces",

keywords = "Conf.proc. > 3 pag",

author = "M Poljak and V Jovanovic and T Suligoj",

year = "2010",

language = "English",

publisher = "MIDEM",

pages = "1--4",

editor = "{Donlagic et al}, D",

booktitle = "Proceedings 46th International Conference on Microelectronics, Devices and Materials",

note = "MIDEM Conference 2010, radenci, Slovenia ; Conference date: 29-09-2010 Through 01-10-2010",

}

Poljak, M, Jovanovic, V & Suligoj, T 2010, Physical mechanisms of electron mobility behavior in ultra-thin body double gate MOSFETS with (100) and (111) active surfaces. in D Donlagic et al (ed.), Proceedings 46th International Conference on Microelectronics, Devices and Materials. MIDEM, Ljubljana, Slovenia, pp. 1-4, MIDEM Conference 2010, radenci, Slovenia, 29/09/10.

Physical mechanisms of electron mobility behavior in ultra-thin body double gate MOSFETS with (100) and (111) active surfaces. / Poljak, M; Jovanovic, V; Suligoj, T.
Proceedings 46th International Conference on Microelectronics, Devices and Materials. ed. / D Donlagic et al. Ljubljana, Slovenia: MIDEM, 2010. p. 1-4.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Physical mechanisms of electron mobility behavior in ultra-thin body double gate MOSFETS with (100) and (111) active surfaces

AU - Poljak, M

AU - Jovanovic, V

AU - Suligoj, T

PY - 2010

Y1 - 2010

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SP - 1

EP - 4

BT - Proceedings 46th International Conference on Microelectronics, Devices and Materials

A2 - Donlagic et al, D

PB - MIDEM

CY - Ljubljana, Slovenia

T2 - MIDEM Conference 2010, radenci, Slovenia

Y2 - 29 September 2010 through 1 October 2010

ER -