Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures

S. Hiraoka, K. Horibe, R. Ishihara, S. Oda, T. Kodera

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Physically defined silicon triple quantum dots (TQDs) are fabricated on a silicon-on-insulator substrate by dry-etching. The fabrication method enables us to realize a simple structure that does not require gates to create quantum dot confinement potentials and is highly advantageous for integration. We observe the few-electron regime and resonant tunneling points in the TQDs by applying voltages to two plunger gates at a temperature of 4.2 K. Moreover, we reproduce the measured charge stability diagram by simulation with an equivalent-circuit model composed of capacitors and resistors. The equivalent-circuit simulation makes it clear that we realize three QDs in series within the nanowire, as planned. This circuit model also elucidates the mechanism of resonant tunneling and identifies a quadruple point of TQDs.

Original languageEnglish
Article number074001
Number of pages5
JournalApplied Physics Letters
Volume117
Issue number7
DOIs
Publication statusPublished - 2020

Fingerprint Dive into the research topics of 'Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures'. Together they form a unique fingerprint.

Cite this