Plasma-enhanced chemical vapor deposition of thick silicon nitride films with low stress on inP.

L Shi, CAM Steenbergen, AH de Vreede, MK Smit, TLM Scholtes, FH Groen, JW Pedersen

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	471-473
Number of pages	3
Journal	Journal of Vacuum Science and Technology. Part A: International Journal Devoted to Vacuum, Surfaces, and Films
Volume	14
Publication status	Published - 1996

Cite this

@article{7d38e61d297a463db946f8de1b9b2a8a,

title = "Plasma-enhanced chemical vapor deposition of thick silicon nitride films with low stress on inP.",

author = "L Shi and CAM Steenbergen and {de Vreede}, AH and MK Smit and TLM Scholtes and FH Groen and JW Pedersen",

year = "1996",

language = "Undefined/Unknown",

volume = "14",

pages = "471--473",

journal = "Journal of Vacuum Science and Technology. Part A: International Journal Devoted to Vacuum, Surfaces, and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

}

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Plasma-enhanced chemical vapor deposition of thick silicon nitride films with low stress on inP.

AU - Shi, L

AU - Steenbergen, CAM

AU - de Vreede, AH

AU - Smit, MK

AU - Scholtes, TLM

AU - Groen, FH

AU - Pedersen, JW

PY - 1996

Y1 - 1996

M3 - Article

SN - 0734-2101

VL - 14

SP - 471

EP - 473

JO - Journal of Vacuum Science and Technology. Part A: International Journal Devoted to Vacuum, Surfaces, and Films

JF - Journal of Vacuum Science and Technology. Part A: International Journal Devoted to Vacuum, Surfaces, and Films

ER -