Plasmon-enhanced Ge-based metal-semiconductor-metal photodetector at near-IR wavelengths

Mario Lodari, Paolo Biagioni, Michele Ortolani, Leonetta Baldassarre, Giovanni Isella, Monica Bollani

Research output: Contribution to journalArticleScientificpeer-review

7 Citations (Scopus)
42 Downloads (Pure)


We demonstrate the use of plasmonic effects to boost the near-infrared sensitivity of metal-semiconductor-metal detectors. Plasmon-enhanced photodetection is achieved by properly optimizing Au interdigitated electrodes, micro-fabricated on Ge, a semiconductor that features a strong near IR absorption. Finite-difference time-domain simulations, photocurrent experiments and Fourier-transform IR spectroscopy are performed to validate how a relatively simple tuning of the contact geometry allows for an enhancement of the response of the device adapting it to the specific detection needs. A 2-fold gain factor in the Ge absorption characteristics is experimentally demonstrated at 1.4 µm, highlighting the potential of this approach for optoelectronic and sensing applications.

Original languageEnglish
Pages (from-to)20516-20524
JournalOptics Express
Issue number15
Publication statusPublished - 2019


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