Porous silicon layer as a conformal insulation layer for high aspect ratio through wafer interconnects

TMH Pham, GP Salvador, PM Sarro

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	Undefined/Unknown
Title of host publication	Eurosensors XIX
Editors	de R Reus, S Bouwstra
Place of Publication	Piscataway
Publisher	IEEE Society
Pages	1-4
Number of pages	4
ISBN (Print)	84-475-2984-3
Publication status	Published - 2005
Event	Eurosensors XIX: The 19th European Conference on Solid-State Transducers - Barcelona, Spain Duration: 11 Sep 2005 → 14 Sep 2005 Conference number: 19

Name
Publisher	IEEE

Keywords

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title = "Porous silicon layer as a conformal insulation layer for high aspect ratio through wafer interconnects",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "TMH Pham and GP Salvador and PM Sarro",

year = "2005",

language = "Undefined/Unknown",

isbn = "84-475-2984-3",

publisher = "IEEE Society",

pages = "1--4",

editor = "{R Reus}, de and {S Bouwstra}",

booktitle = "Eurosensors XIX",

note = "null ; Conference date: 11-09-2005 Through 14-09-2005",

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TY - GEN

T1 - Porous silicon layer as a conformal insulation layer for high aspect ratio through wafer interconnects

AU - Pham, TMH

AU - Salvador, GP

AU - Sarro, PM

N1 - Conference code: 19

PY - 2005

Y1 - 2005

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SN - 84-475-2984-3

SP - 1

EP - 4

BT - Eurosensors XIX

A2 - R Reus, de

A2 - S Bouwstra, null

PB - IEEE Society

CY - Piscataway

Y2 - 11 September 2005 through 14 September 2005

ER -