Positron annihilation depth-profiling as a promising tool for the structural analysis of light-soaked a-Si:H absorber layers

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Positron annihilation depth profiling is applied as a sensitive probe to investigate the defect evolution of hydrogenated amorphous silicon (a-Si:H) absorber layers fabricated by the PE-CVD method with typical thicknesses of 300-500 nm. The Doppler broadening lineshape parameter S of the layers was found to depend significantly on the applied hydrogen-to-silane flow ratio during their deposition, related to hydrogen-induced changes in the microstructure and local composition at the positron trapping site. Light-soaking degradation induces a time-dependent variation in the S parameter which seems to correlate with the evolution of defect densities extracted from FT-Photocurrent Spectroscopy measurements.
Original languageUndefined/Unknown
Pages (from-to)632-635
Number of pages4
JournalPhysica Status Solidi. C: Current Topics in Solid State Physics
Issue number3-4
Publication statusPublished - 2010


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