Positron annihilation depth-profiling as a promising tool for the structural analysis of light-soaked a-Si:H absorber layers

SWH Eijt; H Zhu; H Schut; M Tijssen; M Zeman

doi:10.1002/pssc.200982882

Positron annihilation depth-profiling as a promising tool for the structural analysis of light-soaked a-Si:H absorber layers

SWH Eijt, H Zhu, H Schut, M Tijssen, M Zeman

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

Positron annihilation depth profiling is applied as a sensitive probe to investigate the defect evolution of hydrogenated amorphous silicon (a-Si:H) absorber layers fabricated by the PE-CVD method with typical thicknesses of 300-500 nm. The Doppler broadening lineshape parameter S of the layers was found to depend significantly on the applied hydrogen-to-silane flow ratio during their deposition, related to hydrogen-induced changes in the microstructure and local composition at the positron trapping site. Light-soaking degradation induces a time-dependent variation in the S parameter which seems to correlate with the evolution of defect densities extracted from FT-Photocurrent Spectroscopy measurements.

Original language	Undefined/Unknown
Pages (from-to)	632-635
Number of pages	4
Journal	Physica Status Solidi. C: Current Topics in Solid State Physics
Volume	7
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.200982882
Publication status	Published - 2010

Keywords

professional journal papers
Vakpubl., Overig wet. > 3 pag

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10.1002/pssc.200982882

Cite this

@article{3485952b39a044c1b6ee55ae10211959,

title = "Positron annihilation depth-profiling as a promising tool for the structural analysis of light-soaked a-Si:H absorber layers",

abstract = "Positron annihilation depth profiling is applied as a sensitive probe to investigate the defect evolution of hydrogenated amorphous silicon (a-Si:H) absorber layers fabricated by the PE-CVD method with typical thicknesses of 300-500 nm. The Doppler broadening lineshape parameter S of the layers was found to depend significantly on the applied hydrogen-to-silane flow ratio during their deposition, related to hydrogen-induced changes in the microstructure and local composition at the positron trapping site. Light-soaking degradation induces a time-dependent variation in the S parameter which seems to correlate with the evolution of defect densities extracted from FT-Photocurrent Spectroscopy measurements.",

keywords = "professional journal papers, Vakpubl., Overig wet. > 3 pag",

author = "SWH Eijt and H Zhu and H Schut and M Tijssen and M Zeman",

year = "2010",

doi = "10.1002/pssc.200982882",

language = "Undefined/Unknown",

volume = "7",

pages = "632--635",

journal = "Physica Status Solidi. C: Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley",

number = "3-4",

}

TY - JOUR

T1 - Positron annihilation depth-profiling as a promising tool for the structural analysis of light-soaked a-Si:H absorber layers

AU - Eijt, SWH

AU - Zhu, H

AU - Schut, H

AU - Tijssen, M

AU - Zeman, M

PY - 2010

Y1 - 2010

N2 - Positron annihilation depth profiling is applied as a sensitive probe to investigate the defect evolution of hydrogenated amorphous silicon (a-Si:H) absorber layers fabricated by the PE-CVD method with typical thicknesses of 300-500 nm. The Doppler broadening lineshape parameter S of the layers was found to depend significantly on the applied hydrogen-to-silane flow ratio during their deposition, related to hydrogen-induced changes in the microstructure and local composition at the positron trapping site. Light-soaking degradation induces a time-dependent variation in the S parameter which seems to correlate with the evolution of defect densities extracted from FT-Photocurrent Spectroscopy measurements.

AB - Positron annihilation depth profiling is applied as a sensitive probe to investigate the defect evolution of hydrogenated amorphous silicon (a-Si:H) absorber layers fabricated by the PE-CVD method with typical thicknesses of 300-500 nm. The Doppler broadening lineshape parameter S of the layers was found to depend significantly on the applied hydrogen-to-silane flow ratio during their deposition, related to hydrogen-induced changes in the microstructure and local composition at the positron trapping site. Light-soaking degradation induces a time-dependent variation in the S parameter which seems to correlate with the evolution of defect densities extracted from FT-Photocurrent Spectroscopy measurements.

KW - professional journal papers

KW - Vakpubl., Overig wet. > 3 pag

U2 - 10.1002/pssc.200982882

DO - 10.1002/pssc.200982882

M3 - Article

SN - 1862-6351

VL - 7

SP - 632

EP - 635

JO - Physica Status Solidi. C: Current Topics in Solid State Physics

JF - Physica Status Solidi. C: Current Topics in Solid State Physics

IS - 3-4

ER -