Positron beam technique for the study of defects at the Si/SiO2 interface of a polysillicon gated MOS system

M Clement, JMM de Nijs, H Schut, A van Veen, p Balk

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientific

    Original languageUndefined/Unknown
    Title of host publicationMat. Res. Soc. Symp. Proc. 1997
    Number of pages6
    Publication statusPublished - 1997

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