Positron beam technique for the study of defects at the Si/SiO2 interface of a polysillicon gated MOS system

M Clement, JMM de Nijs, H Schut, A van Veen, p Balk

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientific

    Original languageUndefined/Unknown
    Title of host publicationMat. Res. Soc. Symp. Proc. 1997
    Pages143-148
    Number of pages6
    Publication statusPublished - 1997

    Cite this

    Clement, M., de Nijs, JMM., Schut, H., van Veen, A., & Balk, P. (1997). Positron beam technique for the study of defects at the Si/SiO2 interface of a polysillicon gated MOS system. In Mat. Res. Soc. Symp. Proc. 1997 (pp. 143-148)