Positron beam technique for the study of defects at the Si/SiO2 interface of a polysillicon gated MOS system

M Clement, JMM de Nijs, H Schut, A van Veen, p Balk

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

Cite this

@inproceedings{c9f8509a6091463b9f9b67aae4e8a604,

title = "Positron beam technique for the study of defects at the Si/SiO2 interface of a polysillicon gated MOS system",

author = "M Clement and {de Nijs}, JMM and H Schut and {van Veen}, A and p Balk",

year = "1997",

language = "Undefined/Unknown",

pages = "143--148",

booktitle = "Mat. Res. Soc. Symp. Proc. 1997",

}