Positronium for depth selective analysis of structuarally ordered porosity in mesoporous low-k silica films

A van Veen, R Escobar Galindo, SWH Eijt, CV Falub, H Schut

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

    Original languageUndefined/Unknown
    Title of host publicationProceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD
    EditorsM Hasegawa
    Place of PublicationSendai, Japan
    PublisherTohoku University
    Pages29-45
    Number of pages17
    Publication statusPublished - 2003
    Event3rd International Workshop on Positron Studies of Semiconductor Defects PSSD-3, Sendai Japan - Sendai
    Duration: 29 Sep 20024 Oct 2002

    Publication series

    Name
    PublisherTohoku University

    Conference

    Conference3rd International Workshop on Positron Studies of Semiconductor Defects PSSD-3, Sendai Japan
    Period29/09/024/10/02

    Keywords

    • conference contrib. refereed
    • Conf.proc. > 3 pag

    Cite this

    van Veen, A., Escobar Galindo, R., Eijt, SWH., Falub, CV., & Schut, H. (2003). Positronium for depth selective analysis of structuarally ordered porosity in mesoporous low-k silica films. In M. Hasegawa (Ed.), Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD (pp. 29-45). Tohoku University.