Positronium for depth selective analysis of structuarally ordered porosity in mesoporous low-k silica films

A van Veen; R Escobar Galindo; SWH Eijt; CV Falub; H Schut

Positronium for depth selective analysis of structuarally ordered porosity in mesoporous low-k silica films

A van Veen, R Escobar Galindo, SWH Eijt, CV Falub, H Schut

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	Undefined/Unknown
Title of host publication	Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD
Editors	M Hasegawa
Place of Publication	Sendai, Japan
Publisher	Tohoku University
Pages	29-45
Number of pages	17
Publication status	Published - 2003
Event	3rd International Workshop on Positron Studies of Semiconductor Defects PSSD-3, Sendai Japan - Sendai Duration: 29 Sept 2002 → 4 Oct 2002

Publication series

Name
Publisher	Tohoku University

Conference

Conference	3rd International Workshop on Positron Studies of Semiconductor Defects PSSD-3, Sendai Japan
Period	29/09/02 → 4/10/02

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Cite this

@inproceedings{59c7b1944b0a4bb194ae457c590019c9,

title = "Positronium for depth selective analysis of structuarally ordered porosity in mesoporous low-k silica films",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "{van Veen}, A and {Escobar Galindo}, R and SWH Eijt and CV Falub and H Schut",

year = "2003",

language = "Undefined/Unknown",

publisher = "Tohoku University",

pages = "29--45",

editor = "M Hasegawa",

booktitle = "Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD",

note = "3rd International Workshop on Positron Studies of Semiconductor Defects PSSD-3, Sendai Japan ; Conference date: 29-09-2002 Through 04-10-2002",

}

van Veen, A, Escobar Galindo, R, Eijt, SWH, Falub, CV & Schut, H 2003, Positronium for depth selective analysis of structuarally ordered porosity in mesoporous low-k silica films. in M Hasegawa (ed.), Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD. Tohoku University, Sendai, Japan, pp. 29-45, 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD-3, Sendai Japan, 29/09/02.

Positronium for depth selective analysis of structuarally ordered porosity in mesoporous low-k silica films. / van Veen, A; Escobar Galindo, R; Eijt, SWH et al.
Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD. ed. / M Hasegawa. Sendai, Japan: Tohoku University, 2003. p. 29-45.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Positronium for depth selective analysis of structuarally ordered porosity in mesoporous low-k silica films

AU - van Veen, A

AU - Escobar Galindo, R

AU - Eijt, SWH

AU - Falub, CV

AU - Schut, H

PY - 2003

Y1 - 2003

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SP - 29

EP - 45

BT - Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD

A2 - Hasegawa, M

PB - Tohoku University

CY - Sendai, Japan

T2 - 3rd International Workshop on Positron Studies of Semiconductor Defects PSSD-3, Sendai Japan

Y2 - 29 September 2002 through 4 October 2002

ER -