Potential and limitations of CsBi3I10as a photovoltaic material

Paz Sebastia-Luna, María C. Gélvez-Rueda, Chris Dreessen, Michele Sessolo, Ferdinand C. Grozema, Francisco Palazon*, Henk J. Bolink

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)

Abstract

Herein we demonstrate the dry synthesis of CsBi3I10 both as a free-standing material and in the form of homogeneous thin films, deposited by thermal vacuum deposition. Chemical and optical characterization shows high thermal stability, phase purity, and photoluminescence centered at 700 nm, corresponding to a bandgap of 1.77 eV. These characteristics make CsBi3I10 a promising low-toxicity material for wide bandgap photovoltaics. Nevertheless, the performance of this material as a semiconductor in solar cells remains rather limited, which can be at least partially ascribed to a low charge carrier mobility, as determined from pulsed-radiolysis time-resolved microwave conductivity. Further developments should focus on understanding and overcoming the current limitations in charge mobility, possibly by compositional tuning through doping and/or alloying, as well as optimizing the thin film morphology which may be another limiting factor. This journal is

Original languageEnglish
Pages (from-to)15670-15674
JournalJournal of Materials Chemistry A
Volume8
Issue number31
DOIs
Publication statusPublished - 2020

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