Power Sandwich industrial drive with SiC JFETs

I Josifovic, J Popovi¿-Gerber, JA Ferreira

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

    13 Citations (Scopus)


    This work presents an implementation of a compact and highly efficient 2.2kW industrial drive using the Power Sandwich layered construction, x-dimension (x-dim) passive components and wide-band gap SiC semiconductors (JFETs and diodes). X-dim SMT components that have uniform height and enhanced thermal properties are stacked between planar substrates to achieve high power density and better thermal performance of industrial drive. The use of wide band gap SiC semiconductors results in an industrial drive efficiency increase of around 3% compared to that of Si-based counterpart. It is found that the parasitic coupling between SiC semiconductors and heat sinks significantly deteriorates the JFET's switching performance. The thermal management concept for industrial drive, in which two separate heat sinks minimises the capacitive coupling effect thus exploiting the full potential of fast SiC JFETs is proposed. The layered 3-D construction and lower power loss enabled by SiC semiconductors allows for reduced thermal management effort and consequently increased power density. The 2.2kW SiC-based industrial drive has the power density of 3.8kW/l, system efficiency of 98.4% and operates at the temperatures below 50°C without typical heavy and/or complex heat sinks.
    Original languageEnglish
    Title of host publicationProceedings of the 2011-14th European Conference on Power Electronics and Applications
    EditorsP Wheeler, JL Thomas
    Place of PublicationPiscataway, NJ, USA
    Number of pages10
    ISBN (Print)978-1-61284-167-0
    Publication statusPublished - 2011
    Event14th European Conference on Power Electronics and Applications, EPE'11 ECCE Europe, Birmingham, UK - Piscataway, NJ, USA
    Duration: 30 Aug 20111 Sept 2011

    Publication series



    Conference14th European Conference on Power Electronics and Applications, EPE'11 ECCE Europe, Birmingham, UK


    • conference contrib. refereed
    • Conf.proc. > 3 pag


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